Anisotropic etching of three-dimensional shapes in silicon the important role of galvanic interaction

Journal of the Electrochemical Society

Volumn 151, Issue 10, 2004, Pages

  Kretschmer, H R ^a   Xia, X H ^b   Kelly, J J ^c   Steckenborn, A ^a  

^a SIEMENS AG   (Germany)

^b NANJING UNIVERSITY   (China)

^c UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CATHODIC PROTECTION; CRYSTALLOGRAPHY; CURRENT DENSITY; ETCHING; MICROELECTROMECHANICAL DEVICES; OPTICAL MICROSCOPY; PROFILOMETRY; SILICON; SOLUTIONS; STRUCTURE (COMPOSITION); THREE DIMENSIONAL;

CHEMICAL ETCHING; SILICON-MASK INTERFACES; SURFACE GEOMETRY; THREE-DIMENSIONAL STRUCTURES;

ELECTROCHEMISTRY;

EID: 8744225473     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1790512     Document Type: Article

References (31)

1. M. Elwenspoek and H. V. Jansen, Silicon Micromachining, Cambridge University Press, Cambridge (1999).
2. D. L. Kendall, Appl. Phys. Lett., 26, 195 (1975).
3. S. D. Collins, J. Electrochem. Soc., 144, 2242 (1997).
4. H. Schröder, E. Obermaier, and A. Steckenborn, J. Micromech. Microeng., 8, 99 (1998).
5. P. J. Hesketh, C. Ju, S. Gowda, E. Zanoria, and S. Danyluk, J. Electrochem. Soc., 140, 1080 (1993).
6. A. Koide, K. Sato, and S. Tanaka, in Proceedings of the IEEE Conference on MEMS, p. 412, IEEE, Piscataway, NJ (1991).
7. K. Sato, M. Shikida, Y. Matsushima, T. Yamashiro, K. Asaumi, Y. Iriye, and M. Yamamato, Sens. Actuators, A, 64, 87 (1998).
8. H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgärtel, J. Electrochem. Soc., 137, 3612 (1990).
9. U. Schnakenberg, W. Benecke, and B. Löchel, Sens. Actuators, A, 21-23, 1031 (1990).
10. J. van Suchtelen and E. van Veenendaal, J. Appl. Phys., 87, 8721 (2000).
11. E. van Veenendaal, J. van Suchtelen, K. Sato, A. J. Nijdam, J. G. E. Gardeniers, W. J. P. van Enckevort, and M. Elwenspoek, J. Appl. Phys., 87, 8732 (2000).
12. E. van Veenendaal, A. J. Nijdam, J. van Suchtelen, K. Sato, J. G. E. Gardeniers, W. J. P. van Enckevort, and M. Elwenspoek, Sens. Actuators, A, 84, 324 (2000).
13. P. Allongue, V. Costa-Kieling, and H. Gerischer, J. Electrochem. Soc., 140, 1018 (1993).
14. X. Xia, C. M. A. Ashruf, P. J. French, J. Rappich, and J. J. Kelly, J. Phys. Chem. B, 105, 5722 (2001).
15. T. Baum and D. J. Schiffrin, J. Electroanal. Chem., 436, 239 (1997); T. Baum and D. J. Schiffrin, J. Chem. Soc., Faraday Trans., 94, 691 (1998).
16. T. Baum and D. J. Schiffrin, J. Electroanal. Chem., 436, 239 (1997); T. Baum and D. J. Schiffrin, J. Chem. Soc., Faraday Trans., 94, 691 (1998).
17. P. Raisch, W. Haiss, R. J. Nichols, and D. J. Schiffrin, J. Phys. Chem. B, 105, 12508 (2001).
18. O. J. Glembocki, R. E. Stahlbusch, and M. Tomkiewicz, J. Electrochem. Soc., 132, 145 (1985).
19. X. H. Xia and J. J. Kelly, Phys. Chem. Chem. Phys., 3, 5304 (2001).
20. J. J. Kelly, X. H. Xia, C. M. A. Ashruf, and P. J. French, IEEE Sens. J., 1, 127 (2001).
21. P. Allongue, V. Costa-Kieling, and H. Gerischer, J. Electrochem. Soc., 140, 1009 (1993).
22. J. W. Faust and E. D. Palik, J. Electrochem. Soc., 130, 1413 (1983).
23. R. L. Smith, B. Kloeck, N. De Rooij, and S. D. Collins, J. Electroanal. Chem., 238, 103 (1987).
24. P. H. L. Notten and J. J. Kelly, J. Electrochem. Soc., 134, 444 (1987).
25. P. Allongue, C. Henry de Villeneuve, S. Morin, R. Boukherroub, and D. D. M. Wayner, Electrochim. Acta, 45, 4591 (2000).
26. M. L. Munford, R. Cortes, and P. Allongue, Sens. Mater., 13, 259 (2001).
27. P. Allongue, H. Brune, and H. Gerischer, Surf. Sci., 275, 414 (1992).
28. P. Raisch, W. Haiss, R. J. Nichols, and D. J. Schiffrin, Electrochim. Acta, 45, 4635 (2000).
29. P. M. M. C. Bressers, J. J. Kelly, H. J. M. Gardeniers, and M. Elwenspoek, J. Electrochem. Soc., 143, 1744 (1996).
30. J. Frühauf and B. Hannemann, in Proceedings of the Workshop on Physical Chemistry of Wet Chemical Etching of Silicon, p. 16, Holten, The Netherlands (1998).
31. B. Hannemann and J. Frühauf, in The 11th Annual International Workshop on Microelectromechanical Systems MEMS'98, p. 234, IEEE, Piscataway, NJ (1998).