Hot carrier luminescence during porous etching of GaP under high electric field conditions

Surface Science

Volumn 529, Issue 1-2, 2003, Pages 197-203

  Van Driel, A F ^a   Bret, B P J ^b,c   Vanmaekelbergh, D ^a   Kelly, J J ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

^b UNIVERSITY OF AMSTERDAM   (Netherlands)

^c UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Electrochemical methods; Electroluminescence; Electron solid interactions; Field emission; Gallium phosphide; Porous solids

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTROLUMINESCENCE; ETCHING; IONIZATION OF SOLIDS; LIGHT EMISSION; POROUS MATERIALS; SINGLE CRYSTALS;

POROUS ETCHING;

GALLIUM COMPOUNDS;

EID: 0037376992     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00262-0     Document Type: Article

References (34)

1. Kelly J.J., Vanmaekelbergh D. Porous etched semiconductors; formation and characterization. The Electrochemistry of Nanomaterials. 2001;Weinheim, Germany. (Chapter 4).
2. Erne B.H., Vanmaekelbergh D., Kelly J.J. J. Electrochem. Soc. 143:1996;305.
3. Takizawa T., Arai S., Nakahara M. Jpn. J. Appl. Phys. Part 2 Lett. 33:1994;L643.
4. Langa S., Tiginyanu I.M., Carstensen J., Christophersen M., Foll H. Electrochem. Solid State Lett. 3:2000;514.
5. Schmuki P., Fraser J., Vitus C.M., Graham M.J., Isaacs H.S. J. Electrochem. Soc. 143:1996;3316.
6. Oskam G., Natarajan A., Searson P.C., Ross F.M. Appl. Surf. Sci. 119:1997;160.
7. Li X.L., Kim Y.W., Bohn P.W., Adesida I. Appl. Phys. Lett. 80:2002;980.
8. F. Schuurmans, University of Amsterdam, 1999.
9. Schuurmans F.J.P., Vanmaekelbergh D., van de Lagemaat J., Lagendijk A. Science. 284:1999;141.
10. Schuurmans F.J.P., Megens M., Vanmaekelbergh D., Lagendijk A. Phys. Rev. Lett. 83:1999;2183.
11. Johnson P.M., Bret B.P.J., Gómez Rivas J., Kelly J.J., Lagendijk A. Phys. Rev. Lett. 89:2002;243901.
12. Kikuno E., Amiotti M., Takizawa T., Arai S. Jpn. J. Appl. Phys., Part 1-Regular Papers Short Notes and Review Papers. 34:1995;177.
13. Erne B.H., Vanmaekelbergh D., Kelly J.J. Adv. Mater. 7:1995;739.
14. Pilkuhn M., Rupprecht H. J. Appl. Phys. 36:1965;684.
15. Gershenzon M., Mikulyak R.M. J. Appl. Phys. 32:1961;1338.
16. Smandek B., Gerischer H. Electrochim. Acta. 30:1985;1101.
17. Aspnes D.E., Studna A.A. Phys. Rev. B: Condens. Matter. 27:1983;985.
18. Stevens-Kalceff M.A., Tiginyanu I.M., Langa S., Foll H., Hartnagel H.L. J. Appl. Phys. 89:2001;2560.
19. Tjerkstra R.W., Gómez Rivas J., Vanmaekelbergh D., Kelly J.J. Electrochem. Solid State Lett. 5:2002;G32.
20. Meijerink A., Bol A.A., Kelly J.J. Appl. Phys. Lett. 69:1996;2801.
21. Cullis A.G., Canham L.T., Calcott P.D.J. J. Appl. Phys. 82:1997;909.
22. Kooij E.S., Rama A.R., Kelly J.J. Surf. Sci. 370:1997;125.
23. Zener C. Proc. Royal Soc. (London) A. 145:1934;523.
24. McAfee K.B., Ryder E.J., Shockley W., Sparks M. Phys. Rev. 83:1951;650.
25. G. Burns, Solid State Physics International Edition Orlando, Florida, 1985.
26. Zhang X.G. J. Electrochem. Soc. 138:1991;3750.
27. Wolff G.A., Hebert R.A., Broder J.D. Phys. Rev. 100:1955;1144.
28. Ullman F.G. Nature. 190:1961;161.
29. Gorton H.C., Swartz J.M., Peet C.S. Nature. 188:1960;303.
30. J.I. Pankove, Optical Processes in Semiconductors, New York, NY, 1975.
31. Sze S.M. Physics of Semiconductor Devices. second ed. 1981;Murray Hill, N. Jersey.
32. Okuto Y., Crowell C.R. Phys. Rev. B. 6:1972;3076.
33. Chelikowsky J.R., Cohen M.L. Phys. Rev. B. 14:1976;556.
34. A.F. van Driel, in press.