Characterization of chemically prepared Si-surfaces by uv-vis and IR spectroscopic ellipsometry and surface photovoltage

Surface Science

Volumn 388, Issue 1-3, 1997, Pages 15-23

  Angermann, H ^a   Henrion, W ^a   Rebien, M ^a   Zettler, J T ^b   Roseler A ^c  

^a HAHN MEITNER INSTITUT   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

Author keywords

Crystalline amorphous interfaces; Ellipsometry; Semiconductor insulator interfaces; Silicon; Silicon oxides; Surface electronic phenomena; Surface photovoltage; Surface roughening; Surface structure, morphology, roughness, and topography

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; ELECTRON ENERGY LEVELS; ELLIPSOMETRY; HYDROGEN BONDS; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); MORPHOLOGY; SEMICONDUCTOR INSULATOR BOUNDARIES; SURFACE PHENOMENA; SURFACE ROUGHNESS; ULTRAVIOLET SPECTROSCOPY;

PHOTOVOLTAGE; SURFACE STATE DENSITY; SURFACE TOPOGRAPHY;

SEMICONDUCTING SILICON;

EID: 0031250996     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00274-4     Document Type: Article

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