High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics

IEEE Electron Device Letters

Volumn 24, Issue 12, 2003, Pages 730-732

  Ding, Shi Jin ^a,b   Hu, Hang ^a   Lim, H F ^a   Kim, S J ^a   Yu, X F ^a   Zhu, Chunxiang ^a   Li, M F ^a,b   Cho, Byung Jin ^a   Chan, Daniel S H ^a   Rustagi, Subhash C ^b   Yu, M B ^b   Chin, Albert ^c   Kwong, Dim Lee ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d The University of Texas at Austin   (United States)

Author keywords

Atomic layer deposition (ALD); HfO2 Al2O3 laminate; High ; Metal insulator metal (MIM) capacitor

Indexed keywords

ALUMINA; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FABRICATION; HAFNIUM COMPOUNDS; INTEGRATED CIRCUITS; LAMINATES; LEAKAGE CURRENTS; MIM DEVICES; SIGNAL PROCESSING;

ATOMIC LAYER DEPOSITION (ALD);

CAPACITORS;

EID: 9144263061     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.820664     Document Type: Article

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