Effects of post-metal annealing on electrical characteristics and thermal stability of W2N/Ta2O5/Si MOS Capacitors

Journal of the Electrochemical Society

Volumn 151, Issue 11, 2004, Pages

  Jiang, Pei Chuen ^a   Chen, J S ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; LEAKAGE CURRENTS; MOS CAPACITORS; MOSFET DEVICES; SILICON; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURES; CHARGE POLARITY; ELECTRODE MATERIALS; QUARTZ TUBE FURNACE;

TUNGSTEN COMPOUNDS;

EID: 10944235582     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1800672     Document Type: Article

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