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Volumn 19, Issue 4, 2001, Pages 1591-1594

Investigation of the W–TiN metal gate for metal–oxide–semiconductor devices

Author keywords

TiN; W

Indexed keywords


EID: 0013286720     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.1345913     Document Type: Conference Paper
Times cited : (14)

References (12)
  • 2
    • 0002375638 scopus 로고    scopus 로고
    • There are many excellent papers related to this topic; see, for example, EDLEDZ, EDLEDZ
    • There are many excellent papers related to this topic; see, for example, W. Lee, T. King, and C. Hu, IEEE Electron Device Lett. EDLEDZ 20, 9 (1999).EDLEDZ
    • (1999) IEEE Electron Device Lett. , vol.20 , pp. 9
    • Lee, W.1    King, T.2    Hu, C.3
  • 3
    • 0030784203 scopus 로고    scopus 로고
    • JESOAN, and references therein., JESOAN
    • W. Yeh, Y. Shiau, and M. Chen, J. Electrochem. Soc. JESOAN 144, 214 (1997), and references therein.JESOAN
    • (1997) J. Electrochem. Soc. , vol.144 , pp. 214
    • Yeh, W.1    Shiau, Y.2    Chen, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.