Interface characteristics between tungsten silicide electrodes and thin dielectrics

Microelectronic Engineering

Volumn 55, Issue 1-4, 2001, Pages 197-203

  Sell, B ^a   Willer, J ^a   Pomplun, K ^a   Sanger A ^a   Schumann, D ^a   Krautschneider, W ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRODES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOS CAPACITORS; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY; TUNGSTEN COMPOUNDS;

BAND DISCONTINUITY;

ULSI CIRCUITS;

EID: 0034833212     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00448-2     Document Type: Article

References (4)

1. S. Kamiyama et al., IEDM Tech. Dig. (1993) 49-52.
2. D. Roy, Quantum Mechanical Tunneling And Its Applications, World Scientific Publication, 1986.
3. J.-G. Lee et al., Jpn. J. Appl. Phys. 36 (1997) 7140-7145.
4. E.H. Nicollian, J.R. Brews, MOS Physics and Technology, Wiley, New York, 1982.