Structural and electrical characteristics of W-N thin films prepared by reactive rf sputtering

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 3, 2003, Pages 616-622

  Jiang, Pei Cheun ^a   Chen, J S ^a   Lin, Y K ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BINDING ENERGY; CHEMICAL BONDS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNETRON SPUTTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TUNGSTEN COMPOUNDS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

FOUR-POINT PROBE; GLANCING INCIDENT ANGLE X RAY DIFFRACTION; PARTIAL FLOW RATE; REACTIVE RADIO FREQUENCY MAGNETRON SPUTTERING; TUNGSTEN NITRIDE;

THIN FILMS;

EID: 0038613490     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1564029     Document Type: Article

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