Impact of the polysilicon doping level on the properties of the silicon/oxide interface in polysilicon/oxide/silicon capacitor structures

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 215-218

  Leveugle, C ^a   Hurley, P K ^a   Mathewson, A ^a   Moran, S ^a   Sheehan, E ^a   Kalnitsky, A ^b   Lepert, A ^b   Beinglass, I ^c   Venkatesan, M ^c  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b STMICROELECTRONICS   (Italy)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THERMAL EFFECTS; AMORPHOUS SILICON; ANNEALING; CAPACITANCE MEASUREMENT; OXIDATION; POLYCRYSTALLINE MATERIALS; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE CHARACTERISTICS; FREQUENCY DEPENDENCE; POLYSILICON DOPING LEVEL; POLYSILICON;

MOS DEVICES; CAPACITORS;

EID: 0031150255     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00051-8     Document Type: Article

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