Improvement of sheet resistance and gate oxide integrity using phosphorus ion implantation in tungsten polycide gate

Solid-State Electronics

Volumn 44, Issue 3, 2000, Pages 393-399

  Cho, Won Ju ^a   Hong, Jeong Eui ^a   Jin, Won Hwa ^a   Lee, Kyo Sung ^a   Rha, Sa Kyun ^b   Kim, Hong Seok ^a  

^a Memory Bus HQ   (South Korea)

^b Daejon National University of Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRODES; ION IMPLANTATION; MOS DEVICES; PHOSPHORUS; SILICON COMPOUNDS; TUNGSTEN;

GATE OXIDE INTEGRITY; POLYSILICON; SHEET RESISTANCE; TUNGSTEN POLYCIDE GATE;

GATES (TRANSISTOR);

EID: 0034158838     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00159-8     Document Type: Article

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