Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal-oxide-semiconductor devices

Journal of Applied Physics

Volumn 88, Issue 12, 2000, Pages 7192-7196

  Evangelou, E K ^a   Konofaos, N ^a   Aslanoglou, X A ^a   Dimitriadis, C A ^b   Patsalas, P ^b   Logothetidis, S ^b   Kokkoris, M ^c   Kossionides, E ^c   Vlastou, R ^d   Groetschel, R ^e  

^a UNIVERSITY OF IOANNINA   (Greece)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c INSTITUTE OF NUCLEAR PHYSICS   (Greece)

^d NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^e INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3342970606     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1322068     Document Type: Article

References (13)

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