Gate oxide integrity (GOI) of MOS transistors with W/TiN stacked gate

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 208-209

  Lee, D H ^a   Yeom, K H ^a   Cho, M H ^a   Kang, N S ^a   Shim, T E ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); SPUTTERING; TITANIUM NITRIDE; TUNGSTEN; WEIBULL DISTRIBUTION;

GATE OXIDE INTEGRITY; MOS CAPACITORS; REACTIVE SPUTTERING METHODS; SHORT CHANNEL EFFECT; VOLTAGE BREAKDOWN;

MOSFET DEVICES;

EID: 0029703324     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)