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Volumn 670, Issue , 2001, Pages
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Dual work function CMOS gate technology based on metal interdiffusion
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
DIELECTRIC DEVICES;
ELECTRODES;
ETCHING;
GATES (TRANSISTOR);
INTERDIFFUSION (SOLIDS);
INTERFACES (MATERIALS);
MOSFET DEVICES;
SURFACES;
THRESHOLD VOLTAGE;
CONDUCTION BAND;
CMOS INTEGRATED CIRCUITS;
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EID: 0035556405
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-670-k5.1 Document Type: Conference Paper |
Times cited : (2)
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References (8)
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