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Volumn 670, Issue , 2001, Pages

Dual work function CMOS gate technology based on metal interdiffusion

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRODES; ETCHING; GATES (TRANSISTOR); INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MOSFET DEVICES; SURFACES; THRESHOLD VOLTAGE;

EID: 0035556405     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-670-k5.1     Document Type: Conference Paper
Times cited : (2)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.