The low-frequency noise in n-MOSFETs on strained silicon: Is there room for improvement?

Proceedings - Electrochemical Society

Volumn PV 2005-06, Issue , 2005, Pages 349-359

  Simoen, E ^a   Eneman, G ^b   Verheyen, P ^a   Delhougne, R ^b   Rooyackers, R ^a   Loo, R ^a   Vandervorst, W ^a   De Meyer, K ^b   Claeys, C ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GATES (TRANSISTOR); POLYSILICON; SILICON WAFERS; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE;

LOW-FREQUENCY NOISE; N-MOSFETS; POLYSILICON GATE;

MOSFET DEVICES;

EID: 20844462778     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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