Impact of strain and strain-relaxation on the low-frequency noise of SRB silicon n-MOSFETs

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 529-532

  Simoen, Eddy ^a   Eneman, Geert ^a,b   Claeys, Cor ^a,b   Verheyen, Peter ^a   Delhougne, Romain ^a   Loo, Roger ^a   De Meyer, Kristin ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

NOISE ABATEMENT; RELAXATION PROCESSES; SILICON; SPURIOUS SIGNAL NOISE; TENSILE STRESS;

INTERFACE QUALITY; NOISE PERFORMANCE; RANDOM TELEGRAPH SIGNAL FLUCTUATIONS; SILICON DEVICES;

MOSFET DEVICES;

EID: 33646092980     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546701     Document Type: Conference Paper

References (13)

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