Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 69-72

  Lee, M H ^a   Chen, P S ^a   Hua, W C ^b   Yu, C Y ^b   Tseng, Y T ^a   Maikap, S ^b   Hsu, Y M ^a   Liu, C W ^a,b   Lu, S C ^a   Hsieh, W Y ^a   Tsai, M J ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; HETEROJUNCTIONS; SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; STRAIN; ULTRAHIGH VACUUM; VARIABLE FREQUENCY OSCILLATORS;

LOW FREQUENCY NOISE; RADIO FREQUENCY NOISE;

MOSFET DEVICES;

EID: 0842331417     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. K. Rim, et al., Symp. on VLSI Tech., pp. 98-99, 2002.
3. J. L. Hoyt, et al., IEDM Tech. Dig., pp. 23-26, 2002.
4. H. Aoki, et. al., Int. Conference on Microelectronic Test Structure Proc., pp.257-261, 2001.
5. P. Fahey, et al., Appl. Phys. Lett., 54, pp.843-845, 1989.