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Volumn 780, Issue , 2005, Pages 187-190
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The low-frequency noise of strained silicon n-MOSFETs
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Author keywords
Rapid Thermal Oxidation (RTO); Strain Relaxed Buffer (SRB) layer; Strained silicon substrates
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Indexed keywords
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EID: 33749456213
PISSN: 0094243X
EISSN: 15517616
Source Type: Conference Proceeding
DOI: 10.1063/1.2036728 Document Type: Conference Paper |
Times cited : (2)
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References (8)
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