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Volumn 780, Issue , 2005, Pages 187-190

The low-frequency noise of strained silicon n-MOSFETs

Author keywords

Rapid Thermal Oxidation (RTO); Strain Relaxed Buffer (SRB) layer; Strained silicon substrates

Indexed keywords


EID: 33749456213     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2036728     Document Type: Conference Paper
Times cited : (2)

References (8)
  • 1
    • 12744267614 scopus 로고    scopus 로고
    • New York: The IEEE
    • Takagi S. et al., IEDM Techn. Dig., New York: The IEEE, 2003, pp. 03/57-03/60.
    • (2003) IEDM Techn. Dig.
    • Takagi, S.1
  • 2
    • 4143068111 scopus 로고    scopus 로고
    • New York: The IEEE
    • Lee M.H. et al., IEDM Techn. Dig., New York: The IEEE, 2003, pp. 03/69-03/72.
    • (2003) IEDM Techn. Dig.
    • Lee, M.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.