Ge diffusion effect on low frequency noise in ultra-thin strained-SOI CMOS

Proceedings - Electrochemical Society

Volumn 7, Issue , 2004, Pages 483-492

  Tanabe, A ^a   Numata, T ^a   Mizuno, T ^a   Maeda, T ^a   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTANCE; MOSFET DEVICES; NATURAL FREQUENCIES; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE; ULTRATHIN FILMS;

CONDUCTION BAND; FREQUENCY NOISE; GE DIFFUSION; MOBILITY DEGRADATION;

GERMANIUM;

EID: 17044398588     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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5. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, IEEE Trans. Electron Devices, 37, 1323 (1990).