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Volumn 96, Issue 1, 2004, Pages 261-268

Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

(4) Sugii, Nobuyuki a Irieda, Shigefumi b Morioka, Jun b Inada, Taroh b

a HITACHI LTD (Japan)

b HOSEI UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; DIFFUSION; ION IMPLANTATION; MOSFET DEVICES; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SOLUBILITY; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); ELECTRICAL ACTIVATION; PARASITIC RESISTANCES; VACANCY CONCENTRATIONS;

HETEROJUNCTIONS;

EID: 3142732893 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1758318 Document Type: Article

Times cited : (33)

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