On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n -channel metal-oxide-semiconductor transistors

Applied Physics Letters

Volumn 86, Issue 22, 2005, Pages 1-3

  Simoen, E ^a   Eneman, G ^a,b   Verheyen, P ^a   Delhougne, R ^a   Loo, R ^a   De Meyer, K ^a,b   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC POTENTIAL; NATURAL FREQUENCIES; PIEZOELECTRIC DEVICES; SILICON WAFERS; THIN FILMS; TRANSDUCERS;

DETERIORATING; INTER-DIGITAL TRANSDUCER (IDT) ELECTRODES; SILICON SUBSTRATES; STRAIN RELAXED BUFFERS;

MOSFET DEVICES;

EID: 20844438980     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1942631     Document Type: Article

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