10-nm-size fabrication of semiconductor substrates and metal thin lines by conventional photolithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 B, 2000, Pages 7063-7066

  Hashioka, Shingi ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

MIM tunneling diode; Nanofabrication; Nanometer slit mask; Nanometer size trench; Photolithography

Indexed keywords

ANODIC OXIDATION; MASKS; NANOTECHNOLOGY; SUBSTRATES; TUNNEL DIODES;

FOWLER-NORDHEIM TUNNELING CURRENTS; NANOMETER SLIT MASKS;

PHOTOLITHOGRAPHY;

EID: 0034427793     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.7063     Document Type: Article

References (6)

1. K. Nakazato and J. D. White: Int. Electron Device Meet. Tech. Dig. (1992) p. 487.
2. K. Fukushima, R. Sasajima, K. Fujimaru and H. Matsumura: Jpn. J. Appl. Phys. 38 (1999) 7233.
3. H. Sugimura, T. Uchida, N. Kitamura and H. Masuhara: J. Phys. Chem. 98 (1994) 4352.
4. K. Fujimaru, T. Ono, R. Nagai and H. Matsumura: Jpn. J. Appl. Phys. 36 (1997) 7786.
5. M. Pourbaix: Atlas of Electrochemical Equilibria in Aqueous Solutions (Pergamon Press, Oxford, 1996) p. 213.
6. M. Koehler and I. A. Hummelgen: Appl. Phys. Lett. 70 (1997) 3254.