A novel sub-micron gap fabrication technology using chemical-mechanical polishing (CMP): Application to lateral field emission device (FED)

Sensors and Actuators, A: Physical

Volumn 97-98, Issue , 2002, Pages 739-743

  Lee, Choon Sup ^a   Han, Chul Hi ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Chemical mechanical polishing; Field emission device; Gap; Poly silicon

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; ELECTRODES; LITHOGRAPHY; MICROMACHINING; OXIDATION; POLYSILICON; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; VOLTAGE CONTROL;

FIELD EMISSION DEVICE; GAP; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SUBMICRON GAP FABRICATION TECHNOLOGY;

ELECTROSTATIC ACTUATORS;

EID: 18544408683     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(02)00014-6     Document Type: Conference Paper

References (9)

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7. Nanometer-scale gap control for low voltage and high current operation of field emission array
8. Flat panel displays based on surface-conduction electron emitters
9. A new lateral field emission device using chemical-mechanical polishing