Electrical properties of thin Ta2O5 films obtained by thermal oxidation of Ta on Si

Microelectronics Reliability

Volumn 38, Issue 5, 1998, Pages 827-832

  Atanassova, E ^a   Spassov, D ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; FILM PREPARATION; LEAKAGE CURRENTS; PERMITTIVITY; REFRACTIVE INDEX; SPUTTERING; TANTALUM COMPOUNDS; THERMOOXIDATION; THIN FILMS;

TANTALUM PENTOXIDE FILMS;

SEMICONDUCTING FILMS;

EID: 0032066401     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00017-1     Document Type: Article

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