Silicon single-electron quantum-dot transistor switch operating at room temperature

Applied Physics Letters

Volumn 72, Issue 10, 1998, Pages 1205-1207

  Zhuang, Lei ^a   Guo, Lingjie ^a   Chou, Stephen Y ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22244482198     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121014     Document Type: Article

References (14)

1. E. Leobandung, L. Guo, Y. Wang, and S. Y. Chou, Appl. Phys. Lett. 67, 938 (1995).
2. Y. Takahashi, H. Namatsu, K. Kurihara, K. Iwadate, M. Nagase, and K. Murase, IEEE Trans. Electron Devices 43, 1213 (1996).
3. H. Fukuda, J. L. Hoyt, M. A. McCord, and R. F. W. Pease, Appl. Phys. Lett. 70, 333 (1997).
4. H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, and T. Ikoma, Appl. Phys. Lett. 68, 3585 (1996).
5. J. Gondermann, T. Röwer, B. Hadam, T. Köster, J. Stein, B. Spangenberg, H. Rokos, and H. Kurz, J. Vac. Sci. Technol. B 14, 4042 (1996).
6. K. Kurihara, H. Namatsu, M. Nagase, and T. Makino, Jpn. J. Appl. Phys., Part 1 35, 6668 (1996).
7. K. Matsumoto, M. Ishii, K. Sagawa, Y. Oka, B. J. Vartanian, and J. S. Harris, Appl. Phys. Lett. 68, 34 (1996).
8. A. Ohata and A. Toriumi, IEICE Trans. Electron. E79-C, 1586 (1996).
9. E. Leobandung, L. Guo, Y. Wang, and S. Y. Chou, J. Vac. Sci. Technol. B 13, 2865 (1995).
10. E. Leobandung, L. Guo, and S. Y. Chou, Appl. Phys. Lett. 67, 2338 (1995).
11. L. Guo, E. Leobandung, and S. Chou, Science 275, 649 (1997).
12. L. Zhuang, L. Guo, and S. Y. Chou, Tech. Dig. Int. Electron Devices Meet. 167 (1997).
13. C. W. J. Beenakker, Phys. Rev. B 44, 1646 (1991).
14. C. Livermore, C. H. Crouch, R. M. Westervelt, K. L. Campman, and A. C. Gossard, Science 274, 1332 (1996).