SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2329-2333

Room temperature coulomb oscillation of a single electron switch with an electrically formed quantum dot and its modeling

(3) Kim, Dae Hwan a,b Lee, Jong Duk a,b Park, Byung Gook a,b

a Seoul National University (South Korea)

b Seoul National University (South Korea)

Author keywords

Independently controllable tunnel junctions; Macro modeling; Polysilicon; Quantum dot; Reoxidation; Room temperature Coulomb oscillation; Sidewall; Single electron switch

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; HYBRID INTEGRATED CIRCUITS; LOGIC CIRCUITS; LSI CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE; TUNNEL JUNCTIONS;

HYBRID DIGITAL CIRCUIT; ROOM TEMPERATURE COULOMB OSCILLATION; SINGLE ELECTRON SWITCH; SINGLE ELECTRON TRANSISTOR; TETRAETHYLORTHOSILICATE OXIDE;

MOSFET DEVICES;

EID: 0033717983 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2329 Document Type: Article

Times cited : (22)

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