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Volumn 39, Issue 4 B, 2000, Pages 2329-2333
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Room temperature coulomb oscillation of a single electron switch with an electrically formed quantum dot and its modeling
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Author keywords
Independently controllable tunnel junctions; Macro modeling; Polysilicon; Quantum dot; Reoxidation; Room temperature Coulomb oscillation; Sidewall; Single electron switch
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Indexed keywords
COMPUTER SIMULATION;
ELECTRIC FIELD EFFECTS;
ELECTRIC POTENTIAL;
HYBRID INTEGRATED CIRCUITS;
LOGIC CIRCUITS;
LSI CIRCUITS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR QUANTUM DOTS;
TEMPERATURE;
TUNNEL JUNCTIONS;
HYBRID DIGITAL CIRCUIT;
ROOM TEMPERATURE COULOMB OSCILLATION;
SINGLE ELECTRON SWITCH;
SINGLE ELECTRON TRANSISTOR;
TETRAETHYLORTHOSILICATE OXIDE;
MOSFET DEVICES;
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EID: 0033717983
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.39.2329 Document Type: Article |
Times cited : (22)
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References (8)
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