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Volumn 39, Issue 4 B, 2000, Pages 2329-2333

Room temperature coulomb oscillation of a single electron switch with an electrically formed quantum dot and its modeling

Author keywords

Independently controllable tunnel junctions; Macro modeling; Polysilicon; Quantum dot; Reoxidation; Room temperature Coulomb oscillation; Sidewall; Single electron switch

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; HYBRID INTEGRATED CIRCUITS; LOGIC CIRCUITS; LSI CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE; TUNNEL JUNCTIONS;

EID: 0033717983     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2329     Document Type: Article
Times cited : (22)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.