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Volumn 40, Issue 3 B, 2001, Pages 2010-2012
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Large electron addition energy above 250 meV in a silicon quantum dot in a single-electron transistor
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Author keywords
Coulomb blockade oscillation; Electron addition energy; MOSFET; Quantized level spacing; Room temperature operation; Silicon single electron transistor; Ultrasmall quantum dot
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
COULOMB BLOCKADE;
CURRENT VOLTAGE CHARACTERISTICS;
MOSFET DEVICES;
OSCILLATIONS;
POINT CONTACTS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MANUFACTURE;
TRANSISTORS;
COULOMB BLOCKADE OSCILLATIONS;
ELECTRON ADDITION ENERGY;
SINGLE ELECTRON TRANSISTORS (SET);
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0035267495
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.2010 Document Type: Article |
Times cited : (59)
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References (10)
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