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Volumn 40, Issue 3 B, 2001, Pages 2010-2012

Large electron addition energy above 250 meV in a silicon quantum dot in a single-electron transistor

Author keywords

Coulomb blockade oscillation; Electron addition energy; MOSFET; Quantized level spacing; Room temperature operation; Silicon single electron transistor; Ultrasmall quantum dot

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; MOSFET DEVICES; OSCILLATIONS; POINT CONTACTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSISTORS;

EID: 0035267495     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2010     Document Type: Article
Times cited : (59)

References (10)
  • 8
    • 0003423226 scopus 로고
    • eds. H. Grabert and M. H. Devoret Plenum Press, New York
    • Single Charge Tunneling, eds. H. Grabert and M. H. Devoret (Plenum Press, New York, 1992).
    • (1992) Single Charge Tunneling


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.