Large electron addition energy above 250 meV in a silicon quantum dot in a single-electron transistor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 2010-2012

  Saitoh, Masumi ^a   Takahashi, Nobuyoshi ^a   Ishikuro, Hiroki ^b   Hiramoto, Toshiro ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Coulomb blockade oscillation; Electron addition energy; MOSFET; Quantized level spacing; Room temperature operation; Silicon single electron transistor; Ultrasmall quantum dot

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; MOSFET DEVICES; OSCILLATIONS; POINT CONTACTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSISTORS;

COULOMB BLOCKADE OSCILLATIONS; ELECTRON ADDITION ENERGY; SINGLE ELECTRON TRANSISTORS (SET);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035267495     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2010     Document Type: Article

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