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Volumn 44, Issue 20-23, 2005, Pages
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Silicon single-hole transistor with large Coulomb blockade oscillations and high voltage gain at room temperature
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Author keywords
Coulomb blockade oscillation; MOSFET; Quantum dot; SET; Silicon; Single electron transistor; Single hole transistor; SOI; Voltage gain
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Indexed keywords
CAPACITANCE;
COULOMB BLOCKADE;
ELECTRIC CURRENTS;
ELECTRIC POTENTIAL;
ELECTRONS;
FABRICATION;
GATES (TRANSISTOR);
MOSFET DEVICES;
OSCILLATIONS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR QUANTUM DOTS;
COULOMB BLOCKADE OSCILLATIONS;
SINGLE ELECTRON TRANSISTORS (SET);
SINGLE HOLE TRANSISTORS;
SOI;
VOLTAGE GAIN;
TRANSISTORS;
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EID: 23944461503
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.44.L640 Document Type: Article |
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Times cited : (17)
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References (15)
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