-
2
-
-
0029206925
-
Fabrication technique for Si single-electron transistor operating at room temperature
-
Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe, "Fabrication technique for Si single-electron transistor operating at room temperature," Electron Lett., vol. 31, pp. 136-147, 1995.
-
(1995)
Electron Lett.
, vol.31
, pp. 136-147
-
-
Takahashi, Y.1
Nagase, M.2
Namatsu, H.3
Kurihara, K.4
Iwadate, K.5
Nakajima, Y.6
Horiguchi, S.7
Murase, K.8
Tabe, M.9
-
3
-
-
0000382265
-
Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate
-
H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, and T. Ikoma, "Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate," Appl. Phys. Lett., vol. 68, pp. 3585-3587.
-
Appl. Phys. Lett.
, vol.68
, pp. 3585-3587
-
-
Ishikuro, H.1
Fujii, T.2
Saraya, T.3
Hashiguchi, G.4
Hiramoto, T.5
Ikoma, T.6
-
4
-
-
0001347335
-
Suppression of effects of parasitic metal-oxide-semiconductor field-effect transistors on si single-electron transistors
-
A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase, "Suppression of effects of parasitic metal-oxide-semiconductor field-effect transistors on si single-electron transistors." Jpn. J. Appl. Phys., vol. 37, pp. 3257-3263, 1998.
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, pp. 3257-3263
-
-
Fujiwara, A.1
Takahashi, Y.2
Namatsu, H.3
Kurihara, K.4
Murase, K.5
-
5
-
-
22244482198
-
Silicon single-electron quantum-dot transistor switch operating at room temperature
-
L. Zhang, L. Guo, and S. Y. Chou, "Silicon single-electron quantum-dot transistor switch operating at room temperature." Appl. Phys. Lett., vol. 72, pp. 1205-1207, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 1205-1207
-
-
Zhang, L.1
Guo, L.2
Chou, S.Y.3
-
6
-
-
0035267495
-
Large electron addition energy above 250 meV in a silicon quantum dot in a single-electron transistor
-
M. Saitoh, N. Takahashi, H. Ishikuro, and T. Hiramoto, "Large electron addition energy above 250 meV in a silicon quantum dot in a single-electron transistor," Jpn. J. Appl. Phys., vol. 40, pp. 2010-2012, 2001.
-
(2001)
Jpn. J. Appl. Phys.
, vol.40
, pp. 2010-2012
-
-
Saitoh, M.1
Takahashi, N.2
Ishikuro, H.3
Hiramoto, T.4
-
7
-
-
0000769977
-
Multigate single-electron transistors and their application to an exclusive-OR gate
-
Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase, "Multigate single-electron transistors and their application to an exclusive-OR gate," Appl. Phys. Lett., vol. 76, pp. 637-639, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 637-639
-
-
Takahashi, Y.1
Fujiwara, A.2
Yamazaki, K.3
Namatsu, H.4
Kurihara, K.5
Murase, K.6
-
8
-
-
0001244663
-
Si complementary single-electron inverter with voltage gain
-
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase, "Si complementary single-electron inverter with voltage gain," Appl. Phys. Lett., vol. 76. pp. 3121-3133, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 3121-3133
-
-
Ono, Y.1
Takahashi, Y.2
Yamazaki, K.3
Nagase, M.4
Namatsu, H.5
Kurihara, K.6
Murase, K.7
-
9
-
-
0034454627
-
Single-electron pass-transistor logic: Operation of its elemental circuit
-
Y. Ono and Y. Takahashi, "Single-electron pass-transistor logic: operation of its elemental circuit," in IEDM Tech. Dig., 2000, pp. 297-300.
-
(2000)
IEDM Tech. Dig.
, pp. 297-300
-
-
Ono, Y.1
Takahashi, Y.2
-
10
-
-
0035718150
-
A multiple-valued logic with merged single-electron and MOS transistors
-
H. Inokawa, A. Fujiwara, and Y. Takahashi, "A multiple-valued logic with merged single-electron and MOS transistors," in IEDM Tech. Dig., 2001, pp. 147-150.
-
(2001)
IEDM Tech. Dig.
, pp. 147-150
-
-
Inokawa, H.1
Fujiwara, A.2
Takahashi, Y.3
-
11
-
-
21544465440
-
Complementary digital logic based on Coulomb blockade
-
J. R. Tucker, "Complementary digital logic based on Coulomb blockade," J. Appl. Phys., vol. 72. pp. 4399-4413, 1992.
-
(1992)
J. Appl. Phys.
, vol.72
, pp. 4399-4413
-
-
Tucker, J.R.1
-
12
-
-
0033309552
-
A new design scheme for logic circuits with single electron transistors
-
K. Uchida, K. Matsuzawa, and A. Toriumi, "A new design scheme for logic circuits with single electron transistors," Jpn. J. Appl. Phys., vol. 38. pp. 4027-4032, 1999.
-
(1999)
Jpn. J. Appl. Phys.
, vol.38
, pp. 4027-4032
-
-
Uchida, K.1
Matsuzawa, K.2
Toriumi, A.3
-
13
-
-
0034447263
-
Room-temperature operation of multifunctional single-electron transistor logic
-
K. Uchida, J. Koga, R. Ohba, and A. Toriumi. "Room-temperature operation of multifunctional single-electron transistor logic." in IEDM Tech. Dig., 2000, pp. 863-865.
-
(2000)
IEDM Tech. Dig.
, pp. 863-865
-
-
Uchida, K.1
Koga, J.2
Ohba, R.3
Toriumi, A.4
-
14
-
-
0032271789
-
Influence of quantum confinement effects on single-electron and single hole transistors
-
H. Ishikuro and T. Hiramoto, "Influence of quantum confinement effects on single-electron and single hole transistors," in IEDM Tech. Dig., 1998, pp. 119-122.
-
(1998)
IEDM Tech. Dig.
, pp. 119-122
-
-
Ishikuro, H.1
Hiramoto, T.2
-
15
-
-
0033715104
-
Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits
-
K. Uchida, K. Matsuzawa, J. Koga, R. Ohba, S. Takagi, and A. Toriumi, "Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits," Jpn. J. Appl. Phys., vol. 39, pp. 2321-2324, 2000.
-
(2000)
Jpn. J. Appl. Phys.
, vol.39
, pp. 2321-2324
-
-
Uchida, K.1
Matsuzawa, K.2
Koga, J.3
Ohba, R.4
Takagi, S.5
Toriumi, A.6
-
17
-
-
0035476340
-
Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film
-
K. Uchida, J. Koga, R. Ohba, S. Takagi, and A. Toriumi, "Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film," J. Appl. Phys., vol. 90, pp. 3551-3557.
-
J. Appl. Phys.
, vol.90
, pp. 3551-3557
-
-
Uchida, K.1
Koga, J.2
Ohba, R.3
Takagi, S.4
Toriumi, A.5
-
19
-
-
34248364176
-
Variable-range hopping in finite one-dimensional wires
-
P. A. Lee, "Variable-range hopping in finite one-dimensional wires." Phys. Rev. Lett., vol. 53, pp. 2042-2045, 1984.
-
(1984)
Phys. Rev. Lett.
, vol.53
, pp. 2042-2045
-
-
Lee, P.A.1
-
20
-
-
0030284113
-
Coulomb blockade effects in edge quantum wire SOI-MOSFETs
-
A. Ohata and A. Toriumi, "Coulomb blockade effects in edge quantum wire SOI-MOSFETs," IEICE Trans. Electron., vol. E79-C. pp. 1586-1589, 1996.
-
(1996)
IEICE Trans. Electron.
, vol.E79-C
, pp. 1586-1589
-
-
Ohata, A.1
Toriumi, A.2
-
21
-
-
0000938894
-
Coulomb blockade effects in edge quantum wire SOI MOSFETs
-
A. Ohata, A. Toriumi, and K. Uchida, "Coulomb blockade effects in edge quantum wire SOI MOSFETs," Jpn. J. Appl. Phys., vol. 36, pp. 1686-1689, 1997.
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
, pp. 1686-1689
-
-
Ohata, A.1
Toriumi, A.2
Uchida, K.3
-
22
-
-
0000532243
-
A Si memory device composed of a one-dimensional metal-oxide-semiconductor field-effect transistor switch and a single-electron transistor detector
-
Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase, "A Si memory device composed of a one-dimensional metal-oxide-semiconductor field-effect transistor switch and a single-electron transistor detector," Jpn. J. Appl. Phys., vol. 38, pp. 2457-2461, 1999.
-
(1999)
Jpn. J. Appl. Phys.
, vol.38
, pp. 2457-2461
-
-
Takahashi, Y.1
Fujiwara, A.2
Yamazaki, K.3
Namatsu, H.4
Kurihara, K.5
Murase, K.6
-
23
-
-
0033095276
-
A memory cell with single-electron and metal-oxide semiconductor transistor integration
-
Z. A. K. Durrani, C. V. Irvine, and H. Ahmed, "A memory cell with single-electron and metal-oxide semiconductor transistor integration," Appl. Phys. Lett., vol. 74, pp. 1293-1295, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1293-1295
-
-
Durrani, Z.A.K.1
Irvine, C.V.2
Ahmed, H.3
|