Semiconductor spintronics

IEEE Transactions on Nanotechnology

Volumn 1, Issue 1, 2002, Pages 19-31

  Akinaga, Hiro ^a,b,d,e,f   Ohno, Hideo ^a,c,g  

^a IEEE   (United States)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION   (Japan)

^f JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^g Editorial Board of the Virtual Journal of Nanoscale Science And Technology

Author keywords

Ferromagnetic semiconductors; Magnetooptic (MO) devices; Magnetoresistive devices; Quantum information; Spin coherence

Indexed keywords

FERROMAGNETIC SEMICONDUCTORS; MAGNETORESISTIVE DEVICES; QUANTUM INFORMATION; SEMICONDUCTOR ELECTRONICS; SPIN COHERENCE; SPIN DEGREES;

CARRIER CONCENTRATION; ELECTRIC CHARGE; FERROMAGNETISM; MAGNETOOPTICAL DEVICES; MAGNETORESISTANCE; PARAMAGNETIC RESONANCE;

SEMICONDUCTOR DEVICE MODELS;

EID: 32944462383     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2002.1005423     Document Type: Article

References (139)

1. H. Ohno, "Making nonmagnetic semiconductor ferromagnetic," Science, vol. 281, pp. 951-956, 1998.
2. H. Ohno, F. Matsukura, and Y. Ohno, "Semiconductor spin electronics," Jpn. Soc. Appl. Phys. Int., vol. 4, no. 5, pp. 4-13, 2002. [Online]. Available: http://www.jsapi.jsap.or.jp/.
3. S. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, "Spintronics: A spin-based electronics vision for the future," Science, vol. 294, pp. 1488-1495, 2001.
4. M. R. Freeman and B. C. Choi, "Advances in magnetic microscopy," Science, vol. 294, pp. 1484-1488, 2001.
5. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, "Electric-field control of ferromagnetism," Nature, vol. 408. pp. 944-946, 2000.
6. S. Koshihara, A. Oiwa, M. Hirasawa, S. Katsumoto, Y. Iye, C. Urano, H. Takagi, and H. Munekata, "Ferromagnetic order induced by photo-generated carriers in magnetic III-IV semiconductor heterostructures of (In,Mn)As-GaSb," Phys. Rev. Lett., vol. 78, pp. 4617-4620, 1997.
7. S. Haneda, H. Munekata, Y. Takatani, and S. Koshihara, "Fe-based magnetic-semiconductor hybrid structures for photocamer-induced magnetism," J. Appl. Phys., vol. 87, pp. 6445-6447, 2000.
8. H. Akinaga, M. Mizuguchi, K. Ono, and M. Oshima, "Room-temperature photoinduced magnetoresistance effect in GaAs including MnSb nanomagnets," Appl. Phys. Lett., vol. 76, pp. 2600-2602, 2000.
9. Sh. U. Yuldashev, Y. Shon, Y. H. Kwon, D. J. Fu, D. Y. Kim, H. J. Kim, T. W. Kang, and X. Fan, "Enhanced positive magnetoresistance effect in GaAs with nanoscale magnetic clusters," J. Appl. Phys., vol. 90, pp. 3004-3306, 2001.
10. K. Onodera, "Optical devices using diluted magnetic semiconductors with a large Faraday effect" (in Japanese), Material Integration, vol. 13, pp. 57-60, 2000.
11. T. Kuroiwa, T. Yasuda, F. Matsukura, A. Shen, Y. Ohno, Y. Segawa, and H. Ohno. "Faraday rotation of ferromagnetic (Ga,Mn)As," Electron. Lett., vol. 34, pp. 190-192, 1998.
12. H. Akinaga, S. Miyanishi, K. Tanaka, W. Van Roy, and K. Onodera, "magnetooptical properties and the potential application of GaAs with magnetic MnAs nanocolusters," Appl. Phys. Lett., vol. 76, pp. 97-99, 2000.
13. H. Shimizu, M. Miyamura, and M. Tanaka, "Enhanced magnetooptical effect in a GaAs:MnAs nanoscale hybrid structure combined with GaAs-AlAs distributed Bragg reflectors," J. Vac. Sci. Technol., vol. B 18, pp. 2063-2065, 2000.
14. ITe waveguide on GaAs substrate," Appl. Phys. Lett., vol. 77, pp. 1593-1595, 2000.
15. M. N. Baibich, J. M. Broto, A. Pert, F. Nguyen Van Dau, F. Petroff, P. Eitenne, G. Creuzet, A. Friederich, and J. Chazelas, "Giant magnetoresistance of (001)Fe-(001)Cr magnetic superlattices," Phys. Rev. Lett., vol. 61, pp. 2472-2475, 1988.
16. 3 - Fe junction," J. Magn. Magn. Mater., vol. 139, pp. L231-L234, 1995.
17. W. F. Egelhoff, Jr., T. Ha, R. D. K. Misra, Y. Kadmon, J. Nir, C. J. Powell, M. D. Stiles, R. D. McMichael, C.-L. Lin, J. M. Sivertsen, J. H. Judy, K. Takano, A. E. Berkowitz, T. C. Anthony, and J. A. Drug, " Magnetoresistance values exceeding 21% in symmetric spin valves," J. Appl. Phys., vol. 78, pp. 273-277, 1995.
18. 25 ferromagnetic electrodes," Jpn. J. Appl. Phys., vol. 39, pp. L439-L441, 2000.
19. N. Akiba, D. Chiba, K. Nakata, F. Matsukura, Y. Ohno, and H. Ohno, "Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures," J. Appl. Phys., vol. 87, pp. 6436-6438, 2000.
20. H. Kêpa, J. Kunter-Pielaszek, A. Twardowski, C. F. Majkrzak, J. Sadowski, T. Story, and T. M. Giebultowicz, "Ferromagnetism of GaMsAs studied by polarized neutron reflectometry," Phys. Rev., vol. B 64, p. 121 302 (R), 2001.
21. D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno, "Magnetoresistance effect and interlayer coupling of (Ga,Mn)As trilayer structures," Appl. Phys. Lett., vol. 77, pp. 1873-1875, 2000.
22. M. Tanaka and Y. Higo, "Large tunneling magnetoresistance in GaMnAs-AlAs-GaMnAs ferromagnetic semiconductor tunnel junctions," Phys. Rev. Lett., vol. 87, p. 26602, 2001.
23. M. Julliere, "Tunneling between ferromagnetic films," Phys. Lett., vol. 54A, pp. 225-226, 1975.
24. D. J. Monsma, R. Vlutters, and J. C. Lodder, "Room temperature-operating spin-valve transistors formed by vacuum bonding," Science, vol. 281, pp. 407-409, 1998.
25. R. Sato and K. Mizushima, "Spin-valve transistor with an Fe-Au-Fe(001) base," Appl. Phys. Lett., vol. 79, pp. 1157-1159, 2001.
26. R. Jansen, P. S. Anil Kumar, O. M. J. Van't Erve, R. Vlutters, P. de Haan, and J. C. Lodder, "Thermal spin-wave scattering in hot-electron magnetotransport across a spin valve," Phys. Rev. Lett., vol. 85, pp. 3277-3280, 2000.
27. M. Mizuguchi, H. Akinaga, K. Ono, and M. Oshima, "Magnetic properties of MnSb granular films," J. Magn. Magn. Mater., vol. 226-230, pp. 1838-1839, 2001.
28. H. Akinaga, M. Mizuguchi, K. Ono, and M. Oshima, "Room-temperature thousandfold magnetoresistance change in MnSb granular films: Magnetoresistive switch effect," Appl. Phys. Lett., vol. 76, pp. 357-359, 2000.
29. S. A. Solin, T. Thio, D. R. Hines, and J. J. Heremans, "Enhanced room-temperature geometric magnetoresistance in inhomogeneous narrow-gap semiconductors," Science, vol. 289, pp. 1530-1532, 2000.
30. P. R. Hammar, B. R. Bennet, M. J. Yang, and M. Johnson, "Observation of spin injection at a ferromagnet-semiconductor interface," Phys. Rev. Lett., vol. 83, pp. 203-206, 1999.
31. F. G. Monzon and M. L. Roukes, "Spin injection and the local Hall effect in InAs quantum wells," J. Magn. Magn. Mater., vol. 198/199, pp. 632-635, 1999.
32. J. Nitta, C.-M. Hu, A. Jensen, J. B. Hansen, and H. Takayanagi, "Spin injection and detection experiment in a two dimensional electron gas with inter-digital-ferromagnetic contacts," Physica, vol. E 10, pp. 467-471, 2001.
33. O. Schmidt, D. Ferrand, L. W. Molenkamp, A. T. Filip, and B. J. van Wees, "Fundamental obstacle for electrical spin injection from a ferro-magnetic metal into a diffusive semiconductor," Phys. Rev., vol. B 62, pp. R4790-R4793, 2000.
34. R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, "Injection and detection of a spin-polarized current in a light-emitting diode," Nature, vol. 402, pp. 787-790, 1999.
35. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, "Electrical spin injection in a ferromagnetic semiconductor heterostructure," Nature, vol. 402, pp. 790-792, 1999.
36. B. T. Jonker, Y. D. Park, B. R. Bennett, H. D. Cheong, G. Kioseoglou, and A. Petrou, "Robust electrical spin injection into a semiconductor heterostructure," Phys. Rev., vol. B 62, pp. 8180-8183, 2000.
37. M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, and H. Ohno, "A spin Esaki diode," Jpn. J. Appl. Phys., vol. 40, pp. L1274-L1276, 2001.
38. E. Johnston-Halperin, D. Lofgreen, R. K. Kawakami, D. K. Young, L. Coldren, A. C. Gossard, and D. D. Awschalom, "Spin-polarized Zener tunneling in (Ga,Mn)As," Phys. Rev., vol. B 65, p. 041306, 2002.
39. M. Oestreich, J. Hubner, D. Hagele, P. J. Klar, W. Heimbrodt, W. W. Ruble, D. E. Ashenford, and B. Lunn, "Spin injection into semiconductors," Appl. Phys. Lett., vol. 74, pp. 1251-1253, 1999.
40. E. I. Rashba, "Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem," Phys. Rev., vol. B 62, pp. R16267-R16270, 2000.
41. H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H.-P. Schonherr, and K. H. Ploog, "Room-temperature spin injection from Fe into GaAs," Phys. Rev. Lett., vol. 87, p. 016601, 2001.
42. A. Tackeuchi, S. Muto, T. Inata, and T. Fujii, "Direct observation of picosecond spin relaxation of excitons in GaAs-AlGaAs quantum wells using spin-dependent optical nonlinearity," Appl. Phys. Lett., vol. 56, pp. 2213-2215, 1990.
43. A. Tackeuchi, O. Wada, and Y. Nishikawa, "Electron spin relaxation in InGaAs-InP multiple-quantum wells," Appl. Phys. Lett., vol. 70, pp. 1131-1133, 1997.
44. A. P. Heberle, W. W. Ruhle, and K. Ploog, "Quantum beats of electron Lamor precession in GaAs wells," Phys. Rev. Lett., vol. 72, pp. 3887-3890, 1994.
45. A. R. Cameron, P. Riblet, and A. Miller, "Spin gratings and the measurement of electron drift mobility in multiple quantum well semiconductors," Phys. Rev. Lett., vol. 76, pp. 4793-4796, 1996.
46. J. M. Kikkawa and D. D. Awschalom, "Resonant spin amplification in n-type GaAs," Phys. Rev. Lett., vol. 80, pp. 4313-4316, 1998.
47. _, "Lateral drag of spin coherence in gallium arsenide," Nature, vol. 397, pp. 139-141, 1999.
48. I. Malajovich, J. M. Kikkawa, D. D. Awschalom, J. J. Berry, and N. Samarth, "Coherent transfer of spin through a semiconductor heterointerface," Phys. Rev. Lett., vol. 84, pp. 1015-1018, 2000.
49. I. Malajovich, J. J. Berry, N. Samarth, and D. D. Awschalom, "Persistent sourcing of coherent spins for multifunctional semiconductor spintronics," Nature, vol. 411, pp. 770-772, 2001.
50. J. M. Kikkawa, I. P. Smorchkova, N. Samarth, and D. D. Awschalom, "Room-temperature spin memory in two-dimensional electron gases," Science, vol. 277, pp. 1284-1287, 1997.
51. T. Adachi, Y. Ohno, F. Matsukura, and H. Ohno, "Spin relaxation in n-modulation doped GaAs-AlGaAs(110) quantum wells," Physica, vol. E 10, pp. 36-39, 2001.
52. E. Johnson-Halperin, B. Beschoten, J. E. Grimaldi, D. D. Awschalom, S. Keller, and J. Speck, "Spin coherence and dephasing in GaN," in Proc. Fall Meeting Material Research Soc., Boston, 2000, 14.8.
53. J. A. Guputa, R. Knobel, N. Samarth, and D. D. Awschalom, "Ultra-fast manipulation of electron spin coherence," Science, vol. 292, pp. 2458-2461, 2001.
54. G. Salis, Y. Kato, K. Ensslin, D. C. Driscoll, A. C. Gossard, and D. D. Awschalom, "Electrical control of spin coherence in semiconductor nanostructures," Nature, vol. 414, pp. 619-622, 2001.
55. D. Loss and D. P. DiVincenzo, "Quantum computation with quantum dots," Phys. Rev., vol. A 57, pp. 120-126, 1998.
56. A. Imamoglu, B. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Serwin, and A. Small, "Quantum information processing using quantum dot spins and cavity QED," Phys. Rev. Lett., vol. 83, pp. 4204-4207, 1999.
57. H. Sasakura, S. Muto, and T. Oshima, "Quantum gates using spin states of triple quantum dots," Physica, vol. E 10, pp. 458-461, 2001.
58. B. H. Kane, "A silicon-based nuclear spin quantum computer," Nature, vol. 393, pp. 133-137, 1998.
59. E. E. Haller, "Isotopically engineered semiconductors," J. Appl. Phys., vol. 77, pp. 2857-2878, 1995.
60. K. M. Itoh, "Semiconductor isotope engineering" (in Japanese), Solid State Physics, vol. 33, pp. 965-978, 1998.
61. K. Takyu, K. M. Itoh, K. Oka, N. Saito, and V. I. Ozhogin, "Growth and characterization of the isotopically enriched "Si bulk single crystal," Jpn. J. Appl. Phys., vol. 38, pp. L1493-L1495, 1999.
62. T. D. Ladd, J. R. Goldman, F. Yamaguchi, Y. Yamamoto, E. Abe, and K. M. Itoh, "An all silicon quantum computer,", quant-ph/0109039, 2001.
63. R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin, V. Roy-chowdhury, T. Mor, and D. DiVincenzo, "Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures," Phys. Rev., vol. A 62, pp. 12306-12315, 2000.
64. D. P. DiVincenzo, "Quantum computing and single-qubit measurements using the spin-filter effect," J. Appl. Phys., vol. 85, pp. 4785-4787, 1999.
65. B. E. Kane, N. S. McAlpine, A. S. Dzurak, R. G. Clark, G. J. Milburn, H. B. Sun, and H. Wiseman, "Single-spin measurement using single-electron transistors to prove two-electron systems," Phys. Rev., vol. B 61, pp.2961-2972, 2000.
66. B. T. Matthias, R. M. Bozorth, and J. H. Van Vleck, "Ferromagnetic interaction in EuO," Phys. Rev. Lett., vol. 7, pp. 160-161, 1961.
67. "Symposium on Magnetic Semiconductors," IBM J. Res. Develop., vol. 14, no. 3, pp. 205-340, 1970.
68. J. K. Furdyna and J. Kossut, Eds., Semiconductor and Semimetals. New York: Academic, 1988, vol. 25.
69. T. Story, H. H. Galazka, R. B. Frankel, and P. A. Wolff, "Carrier-concentration-induced ferromagnetism in PbSnMnTe," Phys. Rev. Lett., vol. 56, pp. 777-779, 1986.
70. H. Munekata, H. Ohno, S. von Molnár, A. Segmüller, L. L. Chang, and L. Esaki, "Diluted magnetic III-V semiconductors," Phys. Rev. Lett., vol. 63, pp. 1849-1852, 1989.
71. H. Ohno, H. Munekata, T. Penny, S. von Molnár, and L. L. Chang, "Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors," Phys. Rev. Lett., vol. 68, pp. 2664-2667, 1992.
72. J. De Boeck, R. Oersterholt, A. Van Esch, H. Bender, C. Bruynseraede, C. Van Hoof, and G. Borgh, "Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy," Appl. Phys. Lett., vol. 68, pp. 2744-2746, 1996.
73. H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, "(Ga.Mn)As: A new diluted magnetic semiconductor based on GaAs," Appl. Phys. Lett., vol. 69, pp. 363-365, 1996.
74. F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, "Transport properties and origin of ferromagnetism in (Ga,Ms)As," Phys. Rev., vol. B 57, pp. R2037-R2040, 1998.
75. T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya, and Y. Otsuka, "(GaMn)As: GaAs-based III-V diluted magnetic semiconductors grown by molecular beam epitaxy," J. Cryst. Growth, vol. 175/176, pp. 1063-1068, 1997.
76. J. Sadowski, J. Domagala, J. Bak-Misiuk, K. Sqiatek, J. Kanski, L. liver, and H. Oscarsson, "MBE growth and properties of GaMnAs (100) films," Acta Phys. Pol., vol. A 94, pp. 509-513, 1998.
77. x As semimagnetic semiconductor layers," Thin Solid Films, vol. 364, pp. 209-212, 2000.
78. A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, T. Kuroiwa, A. Oiwa, A. Endo, S. Katsumoto, and Y. lye, "Epitaxy of (Ga,Mn)As, a new diluted magnetic semiconductor based on GaAs," J. Cryst. Growth, vol. 175/176, pp. 1069-1074, 1997.
79. T. Shono, T. Hasegawa, T. Fukumura, F. Matsukura, and H. Ohno, "Observation of magnetic domain structure in a ferromagnetic semi-conductor (Ga,Mn)As with a scanning Hall probe microscope," Appl. Phys. Lett., vol. 77, pp. 1363-1365, 2000.
80. H. Ohno and F. Matsukura, "A ferromagnetic III-V semiconductor: (Ga,Mn)As," Solid State Commun., vol. 117, pp. 179-186, 2001.
81. T. Hayashi, Y. Hashimoto, S. Katsumoto, and Y. lye, "Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga,Mn)As," Appl. Phys. Lett., vol. 78, pp. 1691-1693, 2001.
82. xAS," Appl. Phys. Lett., vol. 79, pp. 1495-1497, 2001.
83. T. Slupinski, A. Oiwa, S. Yanagi, and H. Munekata, "Preparation of ferromagnetic (In,Mn)As with relatively low hole concentration and Curie temperature 50K," in Proc. 13th Int. Conf. Crystal Growth, Kyoto, Japan, July 30-Aug. 4, 2001, 31p-S11-9, to be published in J. Cryst. Growth.
84. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, "Zener model descriptoin of ferromagnetism in zinc-blende magnetic semiconductors, " Science, vol. 287, pp. 1019-1022, 2000.
85. C. Zener, "Interaction between the d shells in the transition metals," Phys. Rev., vol. 81, pp. 440-44, 1950.
86. x As," Phys. Rev., vol. B 58, pp. R4211-R4214, 1998.
87. T. Jungwirth, W. A. Atkinson, B. H. Lee, and A. H. MacDonald, "Interlayer coupling in ferromagnetic semiconductor superlattices," Phys. Rev., vol. B 59, pp. 9818-9821, 1999.
88. x As," Phys. Rev. Lett., vol. 83, pp. 3073-3076, 1999.
89. T. Dietl, H. Ohno, and F. Matsukura, "Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors," Phys. Rev., vol. B 63, p. 195205, 2001.
90. J. König, H. Lin, and A. H. MacDonald, "Theory of diluted magnetic semiconductor ferromagnetism," Phys. Rev. Lett., vol. 84, pp. 5628-5631, 2000.
91. M. Berciu and R. N. Bhatt, "Effect of disorder on ferromagnetism in diluted magnetic semiconductors," Phys. Rev. Lett., vol. 87, p. 107203, 2001.
92. H. Akai, "Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As," Phys. Rev. Lett., vol. 81, pp. 3002-3005, 1998.
93. T. Ogawa, M. Shirai, N. Suzuki, and I. Kitagawa, "First-principles calculation of electronic structures of diluted magnetic semiconductors (Ga,Mn)As," J. Magn. Magn. Mater., vol. 196/197, pp. 428-429, 1999.
94. J. Inoue, S. Nonoyama, and H. Itoh, "Double resonant mechanism of ferromagnetism and magnetotransport in (Ga-Mn)As," Phys. Rev. Lett., vol. 85, pp. 4610-4613, 2000.
95. A. Chattopadhyay, S. Das Sarma, and A. J. Mills, "Transition temperature of ferromagnetic semiconductors: A dynamic mean field study," Phys. Rev. Lett., vol. 87, p. 227202, 2001.
96. S. Sanvito and N. A. Hill, "Ab inttio transport theory for digital ferromagnetic heterostructures," Phys. Rev. Lett., vol. 87, p. 267202, 2001.
97. x Te, and CdTe by molecular beam epitaxy," Appl. Phys. Lett., vol. 65, pp. 1284-1286, 1994.
98. T. Dietl, A. Haury, and Y. Merle d'Aubigné", "Free carrier-induced ferromagnetism in structures of diluted magnetic semiconductors," Phys. Rev., vol. B 55, pp. R3347-R3350, 1997.
99. A. Haury, A. Wasiela, A. Amoult, J. Cibert, S. Tatarenko, T. Dietl, and Y. Merle d' Aubigné, "Observation of a ferromagnetic transition induced by two-dimensional hole gas in modulation-doped CdMnTe quantum wells," Phys. Rev. Lett., vol. 79, pp. 511-514, 1997.
100. x Te epilayers," J. Cryst. Growth, vol. 214/215, pp. 387-390, 2000.
101. x Te epilayers," J. Appl. Phys., vol. 87, pp. 6451-6453, 2000.
102. x Te,", cond-mat/0107 619.
103. 2," Jpn. J. Appl. Phys., vol. 39, pp. L949-L951. 2000.
104. K. Ueda, H. Tabata, and T. Kawai, "Magnetic and electronic properties of transition-metal-doped ZnO films," Appl. Phys. Lett., vol. 79, pp. 988-990, 2001.
105. Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S. Koshihara, and H. Koinuma, "Room-temperature ferromagnetism in transparent transition metal-doped Titanium dioxide," Science, vol. 291, pp. 854-856, 2001.
106. 2," Appl. Phys. Lett., vol. 79, pp. 3467-3469, 2001.
107. S. Sonoda, S. Shimizu, T. Sasaki. Y. Yamamoto, and H. Hori, "Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sappnire (0001) showing the ferromagnetic behavior at room temperature," in Proc. 13th Int. Conf. Crystal Growth, Kyoto, Japan, July 30-Aug. 4, 2001, 31p-S11-17, to be published in J. Cryst. Growth.
108. M. E. Overberg, C. R. Abernathy, S. J. Peatron, N. A. Theodoropoulou, K. T. McCarthy, and A. F. Hebard, "Indication of ferromagnetism in molecular-beam-epitaxy-derived n-type GaMnN," Appl. Phys. Lett., vol. 79, pp. 1312-1314, 2001.
109. M. L. Reed, N. A. El-Masry, H. H. Stadelmaier, M. K. Ritums, M. J. Reed, C. A. Parker, J. C. Roberts, and S. M. Bedair, "Room temperature ferromagnetic properties of (Ga,Mn)N," Appl. Phys. Lett., vol. 79, pp. 3473-3475, 2001.
110. 1-x," Science, vol. 295, pp. 651-654, 2002.
111. F. Meier and B. P. Zakharchenya, Eds., Optical Orientation. Amsterdam, The Netherlands: Elsevier, 1984.
112. R. Terauchi, Y. Ohno, T. Adachi, A. Sato, F. Matsukura, A. Tackeuchi, and H. Ohno, "Carrier mobility dependence of electron spin relaxation in GaAs quantum wells," Jpn. J. Appl. Phys., vol. 38, pp. 2549-2551, 1999.
113. M. I. D'yakonov and V. Yu. Kachorovskii, "Spin relaxation of two-dimensional electrons in noncentrosymmetric semiconductors," Sov. Phys. Semicond., vol. 20, p. 110, 1986.
114. T. Guettler, A. L. C. Triques, L. Vervoort, R. Ferreira, Ph. Roussignol, P. Voisin, D. Rondi, and J. C. Harmand, "Optical polarization relaxation in InxGal-xAs-based quantum wells: Evidence of the interface symmetry-reduction effect," Phys. Rev., vol. B 58, pp. R10179-R10182, 1998.
115. Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, "Spin relaxation in GaAs(110) quantum wells," Phys. Rev. Lett., vol. 83, pp. 4196-4199, 1999.
116. M. Z. Maialle, E. A. de Andrade e Silva, and L. J. Sham, "Exciton spin dynamics in quantum wells," Phys. Rev., vol. B 47, pp. 15776-15 788, 1993.
117. L. Munoz, E. Perez, L. Vina, and K. Ploog, "Spin relaxation in intrinsic GaAs quantum wells: Influence of excitonic localization," Phys. Rev., vol. B 51, pp. 4247-4257, 1995.
118. J. Wagner, H. Schneider, D. Richards, A. Fisher, and K. Ploog, "Observation of extremely long electron-spin-relaxation times in p-type □-doped GaAs-AlxGas-xAs double heterostructures," Phys. Rev., vol. B 47, pp. 4786-4789, 1993.
119. A. Malinowski, R. S. Britton, T. Grevatt, R. T. Harley, D. A. Ritchie, and M. Y. Simmons, "Spin relaxation in GaAs-AlxGal-xAs quantum wells," Phys. Rev., vol. B 62, pp. 13034-13039, 2000.
120. S. Tarucha, D. G. Austing, T. Honda, R. J. van der Hage, and L. P. Kouwenhoven, "Shell filling and spin effects in a few electron quantum dots," Phys. Rev. Lett., vol. 77, pp. 3613-3616, 1996.
121. P. Recher, E. V. Sukhorukov, and D. Loss, "Quantum dot as spin filter and spin memory," Phys. Rev. Lett., vol. 85, pp. 1962-1965, 2000.
122. D. Weinmann, W. Hausler, and B. Kramer, "Spin blockades in linear and nonlinear transport through quantum dots," Phys. Rev. Lett., vol. 74, pp. 984-987, 1995.
123. D. Goldhaber-Gordon, H. Shtrikman, D. Mahalu, D. Abusch-Magder, U. Meirav, and M. A. Kastner, "Kondo effect in a single-electron transistor," Nature, vol. 391, pp. 156-157, 1998.
124. S. Sasaki, S. De Franceschi, J. M. Elzerman, W. G. van der Wiel, M. Eto, S. Tarucha, and L. P. Kouwenhoven, "Kondo effect in an integer-spin quantum dot," Nature, vol. 405, pp. 764-767, 2000.
125. S. E. Barrett, R.Tycko, L. N. Pfeiffer, and K. W. West, "Directly detected nuclear magnetic resonance of optically pumped GaAs quantum wells," Phys. Rev. Lett., vol. 72, pp. 1368-1371, 1994.
126. D. Gammon, S. W. Brown, K. S. Snow, T. A. Kennedy, D. S. Katzer, and D. Park, "Nuclear spectroscopy in single quantum dots: Nanoscopic Raman scattering and nuclear magnetic resonance," Science, vol. 277, pp. 85-88, 1997.
127. J. M. Kikkawa and D. D. Awschalom, "All-optical magnetic resonance in semiconductors," Science, vol. 287, pp. 473-476, 2000.
128. A. Malinowski and R. T. Harley, "Dynamic nuclear Overhauser shifts in Larmor beats from a quantum well," Solid State Commun., vol. 114, pp. 419-422, 2000.
129. G. Salis, D. T. Fuchs, J. M. Kikkawa, D. D. Awschalom, Y. Ohno, and H. Ohno, "Optical manipulation of nuclear spin by a two-dimensional electron gas," Phys. Rev. Lett., vol. 86, pp. 2677-2680, 2001.
130. K. Sato and H. Katayama-Yoshida, "Material design for transparent ferromagnets with ZnO-based magnetic semiconductors," Jpn. J. Appl. Phys., vol. 39. pp. L555-L558, 2000.
131. -, "Material design of GaN-based ferromagnetic diluted magnetic semiconductors," Jpn. J. Appl. Phys., vol. 40, pp. L485-L487, 2001.
132. M. Shirai, "Electronic and magnetic properties of 3-D transition-metaldoped GaAs," Physica, vol. E 10, pp. 143-147, 2001.
133. H. Akinaga, T. Manage, and M. Shirai, "Material design of half-metallic zinc-blende CrAs and the synthesis by molecular-beam epitaxy," Jpn. J. Appl. Phys., vol. 39, pp. L1118-L1120, 2000.
134. J. H. Zhao, F. Matsukura, K. Takamura, E. Abe, D. Chiba, and H. Ohno, "Room-temperature ferromagnetism in zinc-blende CrSb grown by molecular-beam epitaxy," Appl. Phys. Lett., vol. 79, pp. 2776-2778, 2001.
135. M. E. Platte and G. Vignale, "Unipolar spin diodes and transistor," Appl. Phys. Lett., vol. 78, pp. 1273-1275, 2001.
136. I. Zutic, J. Fabian, and S. Das Sarma, "Spin injection through the depletion layer: A theory of spin-polarized p-n junctions and solar cells," Phys. Rev., vol. B 64, p. 121201, 2001.
137. Z. Zhang, M. L. Roukes, and P. C. Hammel, "Sensitivity and spatial resolution for electron-spin-resonance detection by magnetic resonance force microscopy," J. Appl. Phys., vol. 80, pp. 6931-6938, 1996.
138. G. Bacher, H. Schömig, M. K. Welsch, S. Zaitsev, V. D. Kulakovskii, A. Forchel, S. Lee, M. Dobrowolska, J. K. Furdyna, B. König, and W. Ossau, "Optical spectroscopy on individual CdSe-ZnMnSe quantum dots," Appl. Phys. Lett., vol. 79, pp. 524-526, 2001.
139. K. Adachi and S. Ogawa, Landolt-Bomstein New Series III/7a, H.P.J. Wijn, Ed. New York: Springer-Verlag, 1988, p. 152.