Room-temperature spin memory in two-dimensional electron gases

Science

Volumn 277, Issue 5330, 1997, Pages 1284-1287

  Kikkawa, J M ^a   Smorchkova, I P ^b   Samarth, N ^b   Awschalom, D D ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; KERR MAGNETOOPTICAL EFFECT; MAGNETIC FIELD EFFECTS; POLARIZATION; RELAXATION PROCESSES; TEMPERATURE;

ELECTRONIC SPIN POLARIZATION; ROOM TEMPERATURE SPIN MEMORY; TIME RESOLVED KERR REFLECTIVITY; TWO DIMENSIONAL ELECTRON GASES;

SEMICONDUCTOR MATERIALS;

ARTICLE; ELECTRON SPIN RESONANCE; GAS; OPTICS; OSCILLATION; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR; TEMPERATURE;

EID: 1842377449     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.277.5330.1284     Document Type: Article

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23. Supported by grants from the Office of Naval Research (ONR N00014-97-1-0575 and N00014-97-1-0577) and the NSF Science and Technology Center for Quantized Electronic Structures (DMR 91-20007).