Room-temperature thousandfold magnetoresistance change in MnSb granular films: Magnetoresistive switch effect

Applied Physics Letters

Volumn 76, Issue 3, 2000, Pages 357-359

  Akinaga, H ^a   Mizuguchi, M ^a   Ono, K ^b   Oshima, M ^b  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000802735     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125753     Document Type: Article

References (22)

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22. 100 are the deposition times of MnSb dots and a uniform MnSb film with the thickness of 100 nm, respectively. 23 A staircase-like voltage scan was performed. After the increase or decrease of voltage (1 V step), the voltage was kept at a constant value for 10 sec, then the current was measured.