Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In, Mn)As/GaSb

Physical Review Letters

Volumn 78, Issue 24, 1997, Pages 4617-4620

  Koshihara, S ^a   Oiwa, A ^b   Hirasawa, M ^b   Katsumoto, S ^b   Iye, Y ^b   Urano, C ^b   Takagi, H ^b   Munekata, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; FERMI LEVEL; HALL EFFECT; HETEROJUNCTIONS; IONS; MAGNETOMETERS; MANGANESE; MOLECULAR BEAM EPITAXY; PHYSICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SQUIDS;

FERROMAGNETIC ORDER; FERROMAGNETIC SPIN EXCHANGE; MAGNETIC SEMICONDUCTOR HETEROSTRUCTURE; PARAMAGNETIC CONDITION; PHOTOGENERATED CARRIERS;

MAGNETIZATION;

EID: 0031167317     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.78.4617     Document Type: Article

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