Optical spectroscopy on individual ADSe/ZnMnSe quantum dots

Applied Physics Letters

Volumn 79, Issue 4, 2001, Pages 524-526

  Bacher, G ^a   Schomig H ^a   Welsch, M K ^a   Zaitsev, S ^a,c   Kulakovskii, V D ^a,c   Forchel, A ^a   Lee, S ^b,d   Dobrowolska, M ^b   Furdyna, J K ^b   Konig B ^a   Ossau, W ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^d Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035939413     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1387256     Document Type: Article

References (30)

1. D. Loss, and D. P. DiVincenzo, Phys. Rev. A 57, 120 (1998).
2. M. Oestreich, J. Hübner, D. Hägele, P. J. Klar, W. Heimbrodt, W. W. Rühle, D. E. Ashenford, and B. Lunn, Appl. Phys. Lett. 74, 1251 (1999).
3. R. Fiederling, and M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, Nature (London) 402, 787 (1999).
4. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, Nature (London) 402, 790 (1999).
5. P. Recher, E. V. Sukhorukov, and D. Loss, Phys. Rev. Lett. 85, 1962 (2000).
6. A. A. Maksimov G. Bacher, A. McDonald, V. D. Kulakovskii, A. Forchel, C. Becker, G. Landwehr, and L. W. Molenkamp, Phys. Rev. B 62, R7767 (2000).
7. S. H. Xin, P. D. Wang, A. Yin, C. Kim, M. Dobrowolska, J. L. Merz, and J. K. Furdyna, Appl. Phys. Lett. 69, 3884 (1996).
8. Y. Oka, J. Shen, K. Takabayashi, N. Takahashi, H. Mitsu, I. Souma, and R. Pittini, J. Lumin. 83, 83 (1999).
9. C. S. Kim, M. Kim, S. Lee, J. Kossut, J. K. Furdyna, and M. Dobrowolska, J. Cryst. Growth 214, 395 (2000).
10. D. Gammon, E. S. Snow, B. V. Shanabrook, D. S. Katzer, and D. Park, Science 273, 87 (1996).
11. T. Kümmell, R. Weigand, G. Bacher, A. Forchel, K. Leonardi, D. Hommel, and H. Selke, Appl. Phys. Lett. 73, 3105 (1998).
12. V. D. Kulakovskii, G. Bacher, R. Weigand, T. Kümmell, A. Forchel, E. Borovitskaya, K. Leonardi, and D. Hommel, Phys. Rev. Lett. 82, 1780 (1999).
13. V. Nikitin, P. A. Crowell, J. A. Gupta, D. D. Awschalom, F. Flack, and N. Samarth, Appl. Phys. Lett. 71, 1213 (1997).
14. M. Lowisch, M. Rabe, F. Kreller, and F. Henneberger, Appl. Phys. Lett. 74, 2489 (1999).
15. J. C. Kim, H. Rho, L. M. Smith, H. E. Jackson, S. Lee, M. Dobrowolska, and J. K. Furdyna, Appl. Phys. Lett. 75, 214 (1999).
16. F. Gindele, K. Hild, W. Langbein, and U. Woggon, Phys. Rev. B 60, R2157 (1999).
17. V. Türck, S. Rodt, R. Heitz, R. Engelhardt, U. W. Pohl, D. Bimberg, and R. Steingrüber, Phys. Rev. B 61, 9944 (2000).
18. D. R. Yakovlev, V. P. Kochereshko, I. A. Merkulov, K. V. Kavokin, G. Mackh, W. Ossau, A. Waag, and G. Landwehr, in Proceedings of the 23rd International Conference on the Physics of Semiconductors (World Scientific, Singapore, 1996), Vol. 23, p. 397.
19. J. Seufert, M. Rambach, G. Bacher, A. Forchel, M. Keim, S. Ivanov, A. Waag, and G. Landwehr, Phys. Rev. B 62, 12609 (2000).
20. Of course, a diffusion of Mn atoms into the dot region during the growth cannot be excluded.
21. B. König, I. A. Merkulov, D. R. Yakovlev, W. Ossau, S. M. Ryabchenko, M. Kutrowski, T. Wojtowicz, G. Karczewski, and J. Kossut, Phys. Rev. B 61, 16870 (2000).
22. A. L. Chudnovskiy, R. Oppermann, B. Rosenow, D. R. Yakovlev, U. Zehnder, and W. Ossau, Phys. Rev. B 55, 10519 (1997).
23. J. A. Gaj, R. Planel, and G. Fishman, Solid State Commun. 29, 435 (1979).
24. A. Twardowski, M. von Ortenberg, M. Demianiuk, and R. Pauthenet, Solid State Commun. 51, 849 (1984).
25. J. M. Fatah, T. Piorek, P. Harrison, T. Stirner, and W. E. Hagston, Phys. Rev. B 49, 10341 (1994).
26. P. J. Klar, D. Wolverson, J. J. Davies, W. Heimbrodt, and M. Happ, Phys. Rev. B 57, 7103 (1998).
27. K. V. Kavokin, I. A. Merkulov, D. R. Yakovlev, W. Ossau and G. Landwehr, Phys. Rev. B 60, 16499 (1999).
28. J. Seufert, M. Scheibner, G. Bacher, S. Zaitsev, H. Schömig, M. K. Welsch, V. D. Kulakovskii, A. Forchel, S. Lee, M. Dobrowolska, and J. K. Furdyna (unpublished).
29. The energy shift due to the temperature-dependent band gap shift has been taken from nonmagnetic CdSe/ZnSe reference samples, see, e.g., Ref. 19.
30. 0 (for which we assumed the literature value cited for bulk material) can be different in our CdSe/ZnMnSe system.