Growth and characterization of the isotopically enriched 28Si bulk single crystal

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 B, 1999, Pages

  Takyu, Ken Ichiro ^a   Itoh, Kohei M ^a,b   Oka, Kunihiko ^c   Saito, Naoaki ^c   Ozhogin, Valerii I ^d  

^a KEIO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

^d KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ISOTOPES; LIQUID PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES;

FLOATING-ZONE GROWTH;

SEMICONDUCTING SILICON;

EID: 0033343211     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1493     Document Type: Article

References (18)