Ferromagnetic III-V semiconductor: (Ga,Mn)As

Solid State Communications

Volumn 117, Issue 3, 2001, Pages 179-186

  Ohno, H ^a   Matsukura, F ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; FERROMAGNETIC MATERIALS; MAGNETIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; TRANSPORT PROPERTIES;

MANGANESE ARSENIDE;

MAGNETIC SEMICONDUCTORS;

EID: 0035156353     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00436-1     Document Type: Article

References (52)

1. Kasuya T., Yanase A. Rev. Mod. Phys. 40:1968;684.
2. Mauger A., Godart C. Phys. Rep. 141:1986;51.
3. Furdyna J.K., Kossut J. Semiconductors and Semimetals. Vol. 25:1988;Academic Press, New York.
4. Dietl T. Handbook of Semiconductors. Vol. 3B:1994;North-Holland, Amsterdam.
5. Haury A., Wasiela A., Arnoult A., Cibert J., Tatarenko S., Dietl T., Merle d'Aubigné Y. Phys. Rev. Lett. 79:1997;511.
6. Story T., Galazka R.R., Frankel R.B., Wolff P.A. Phys. Rev. Lett. 56:1986;777.
7. Munekata H., Ohno H., von Molnár S., Segmüller A., Chang L.L., Esaki L. Phys. Rev. Lett. 63:1989;1849.
8. Ohno H., Munekata H., Penney T., von Molnár S., Chang L.L. Phys. Rev. Lett. 68:1992;2664.
9. Ohno H., Shen A., Matsukura F., Oiwa A., Endo A., Katsumoto S., Iye Y. Appl. Phys. Lett. 69:1996;363.
10. Ohno H. Science. 281:1998;951.
11. Ohno H. J. Magn. Magn. Mater. 200:1999;110.
12. Hayashi T., Tanaka M., Nishinaga T., Shimada H., Tsuchiya H., Otsuka Y. J. Cryst. Growth. 175/176:1997;1063.
13. Y. Nishikawa, Y. Satoh, J. Yoshino, The 2nd Symposium on Physics and Application of Spin Related Phenomena in Semiconductors, January 27-28 1997, Sendai, Japan, p. 122.
14. R.K. Kawakami, E. Jonston-Halperin, L.F. Chen, M. Hanson, N. Guébels, J.S. Speck, A.C. Gossard, D.D. Awschalom, Appl. Phys. Lett. 77 (2000) 2379.
15. Van Esch A., Van Bockstal L., De Boeck J., Verbanck G., van Steenbergen A.S., Wellmann P.J., Grietens B., Bogaerts R., Herlach F., Borghs G. Phys. Rev. B. 56:1997;13103.
16. Sadowski J., Domagala J., Bak-Misiuk J., Sqiatek K., Kanski J., Ilver L., Oscarsson H. Acta Phys. Pol. A. 94:1998;509.
17. Hartmann Th., Lampalzer M., Stolz W., Megges K., Lorberth J., Klar P.J., Heimbrodt W. Thin Solid Films. 364:2000;209.
18. De Boeck J., Oesterholt R., Van Esch A., Bender H., Bruynseraede C., Van Hoof C., Borghs G. Appl. Phys. Lett. 68:1996;2744.
19. Matsukura F., Oiwa A., Shen A., Sugawara Y., Akiba N., Kuroiwa T., Ohno H., Endo A., Katsumoto S., Iye Y. Appl. Surf. Sci. 113/114:1997;178.
20. Shen A., Ohno H., Matsukura F., Sugawara Y., Akiba N., Kuroiwa T., Oiwa A., Endo A., Katsumoto S., Iye Y. J. Cryst. Growth. 175/176:1997;1069.
21. Shioda R., Ando K., Hayashi T., Tanaka M. Phys. Rev. B. 58:1998;1100.
22. Oiwa A., Katsumoto S., Endo A., Hirasawa M., Iye Y., Ohno H., Matsukura F., Shen A., Sugawara Y. Solid State Commun. 103:1997;209.
23. Ohno H., Matsukura F., Shen A., Sugawara Y., Oiwa A., Endo A., Katsumoto S., Iye Y. Scheffler M., Zimmermann R. Proceedings of the 23rd International Conference on Physics of Semiconductors. 1996;405-408 World Scientific, Singapore.
24. Arrot A. Phys. Rev. 108:1957;1394.
25. Shono T., Hasegawa T., Fukumura T., Matsukura F., Ohno H. Appl. Phys. Lett. 77:2000;1363.
26. Chien C.L., Westgate C.W. The Hall Effect and Its Applications. 1980;Plenum Press, New York.
27. Matsukura F., Ohno H., Shen A., Sugawara Y. Phys. Rev. B. 57:1998;R2037.
28. Omiya T., Matsukura F., Dietl T., Ohno Y., Sakon T., Motokawa M., Ohno H. Physica E. 7:2000;976.
29. Okabayashi J., Kimura A., Rader O., Mizokawa T., Fujimori A., Hayashi T., Tanaka M. Phys. Rev. B. 58:1998;R4211.
30. Szczytko J., Mac W., Stachow A., Twardowski A., Becla P., Tworzydlo J. Solid State Commun. 99:1996;927.
31. Oiwa A., Katsumoto S., Endo A., Hirasawa M., Iye Y., Ohno H., Matsukura F., Shen A., Sugawara Y. Phys. Status Solidi, B. 205:1998;167.
32. Katsumoto S., Oiwa A., Iye Y., Ohno H., Matsukura F., Shen A., Sugawara Y. Phys. Status Solidi, B. 205:1998;115.
33. Y. Satoh, N. Inoue, Y. Nishikawa, J. Yoshino, 3rd Symposium on Physics and Application of Spin Related Phenomena in Semiconductors, November 17-18 1997, Sendai, Japan, pp. 23-25.
34. Dietl T., Ohno H., Matsukura F., Cibert J., Ferrand D. Science. 287:2000;1019.
35. Kasuya T. Prog. Theor. Phys. 16:1956;45.
36. Jungwirth T., Atkinson W.A., Lee B.H., MacDonald A.H. Phys. Rev. B. 59:1999;9818.
37. Ferrand D., Cibert J., Bourgognon C., Tatarenko S., Wasiela A., Fishman G., Bonanni A., Sitter H., Kolesnik S., Jaroszynski J., Barcz A., Dietl T. J. Cryst. Growth. 214/215:2000;387.
38. König J., Lin H., Mac A.H. Donald. Phys. Rev. Lett. 84:2000;5628.
39. Beschoten B., Crowell P.A., Malajovich I., Awschalom D.D., Matsukura F., Shen A., Ohno H. Phys. Rev. Lett. 83:1999;3073.
40. T. Dietl, H. Ohno, F. Matsukura, xxx.lanl.gov/abs/cond-mat/0007190, 2000.
41. Shirai M., Ogawa T., Kitagawa I., Suzuki N. J. Magn. Magn. Mater. 177/181:1998;1383.
42. Ogawa T., Shirai M., Suzuki N., Kitagawa I. J. Magn. Magn. Mater. 196/197:1999;428.
43. Akai H. Phys. Rev. Lett. 81:1998;3002.
44. Private communications from H. Katayama-Yoshida, T.C. Schulthess, W.H. Butler, M. van Schilfgaarde.
45. S. Sanvito, P. Ordejón, N.A. Hill, xxx.lanl.gov/abs/cond-mat/0011050, 2000.
46. Chiba D., Akiba N., Matsukura F., Ohno Y., Ohno H. Appl. Phys. Lett. 77:2000;1873.
47. Ohno H., Akiba N., Matsukura F., Shen A., Ohtani K., Ohno Y. Appl. Phys. Lett. 73:1998;363.
48. Ohno Y., Young D.K., Beschoten B., Matsukura F., Ohno H., Awschalom D.D. Nature. 402:1999;790.
49. Kikkawa J.M., Smorchkova I.P., Samarth N., Awschalom D.D. Science. 277:1997;1284.
50. Kikkawa J.M., Awschalom D.D. Science. 287:2000;473.
51. Das Sarma S., Fabian J., Hu X., Zutic I. Superlattice Microst. 27:2000;285.
52. Loss D., DiVincenzo D.P. Phys. Rev. A. 57:1998;120.