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Volumn 175-176, Issue PART 2, 1997, Pages 1069-1074

Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs

(10) Shen, A a,c Ohno, H a Matsukura, F a Sugawara, Y a Akiba, N a Kuroiwa, T a Oiwa, A b Endo, A b Katsumoto, S b Iye, Y b

a TOHOKU UNIVERSITY (Japan)

b UNIVERSITY OF TOKYO (Japan)

c SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS (China)

Author keywords

Diluted magnetic semiconductors; Ferromagnetic order; III V compounds; Magnetic anisotropy; Molecular beam epitaxy; Superlattice

Indexed keywords

COMPOSITION EFFECTS; FERROMAGNETISM; LATTICE CONSTANTS; MAGNETIC ANISOTROPY; MAGNETIZATION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

DILUTED MAGNETIC SEMICONDUCTOR; FERROMAGNETIC ORDER; GALLIUM MANGANESE ARSENIDE;

MAGNETIC SEMICONDUCTORS;

EID: 0031147613 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00967-0 Document Type: Article

Times cited : (192)

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