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Journal of Applied Physics

Volumn 96, Issue 2, 2004, Pages 1120-1126

The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire

(8) Huang, Y a Chen, X D a Fung, S a Beling, C D a Ling, C C a Wei, Z F a Xu, S J a Zhi, C Y a

a UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRON SCATTERING; FILM GROWTH; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SAPPHIRE;

CARRIER DISTRIBUTION; NITROGEN VACANCIES; PHONON-PLASMON COUPLING; TEMPERATURE DEPENDANT HALL (TDH) MEASUREMENTS;

GALLIUM NITRIDE;

EID: 3242705262 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1763235 Document Type: Article

Times cited : (21)

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