Dislocations in GaN/sapphire: Their distribution and effect on stress and optical properties

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 875-880

  Jain, S C ^a   Pinardi, K ^a   Maes, H E ^a   Van Overstraeten, R ^a   Willander, M ^a   Atkinson, A ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DISLOCATIONS (CRYSTALS); FILM GROWTH; NITRIDES; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; STRAIN; STRESS CONCENTRATION;

GALLIUM NITRIDE;

INTERFACES (MATERIALS);

EID: 0031370270     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-875     Document Type: Conference Paper

References (9)