Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 9835-9840

  Mavroidis, C ^a   Harris, J J ^a   Jackman, R B ^a   Harrison, I ^b   Ansell, B J ^b   Bougrioua, Z ^c   Moerman, I ^c  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH DISTRIBUTION; DOPANT DISTRIBUTION; DOPED MATERIALS; EPITAXIAL LAYER THICKNESS; EPITAXIAL MATERIALS; GAN EPITAXIAL LAYERS; IMPURITY BANDS; INTERFACE REGIONS; LINEAR DECREASE; MOBILE CHARGE; PARALLEL CONDUCTION; RESISTIVITY MEASUREMENT; SAPPHIRE SUBSTRATES; SHEET CARRIER DENSITIES; TEMPERATURE DEPENDENCE;

CARRIER CONCENTRATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SAPPHIRE;

INTERFACES (MATERIALS);

EID: 0037097916     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1477604     Document Type: Article

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