Effective work function of scandium nitride gate electrodes on SiO 2 and HfO2

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 1-3, 2006, Pages

  Yang, Hyundoek ^a   Heo, Sungho ^a   Lee, Dongkyu ^a   Choi, Sangmoo ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Gate; HfO2; ScN; SiO2; Work function

Indexed keywords

FERMI LEVEL; GATES (TRANSISTOR); MOS DEVICES; OXYGEN; SCANDIUM COMPOUNDS; SILICA;

GATES; HFO2; SCANDIUM NITRIDE (SCN); WORK FUNCTIONS;

ELECTROCHEMICAL ELECTRODES;

EID: 32044441677     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L83     Document Type: Article

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