Electrical characteristics of metal-oxide-semiconductor device with Sc gate on atomic-layer-deposited HfO2

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 37-41, 2005, Pages

  Yang, Hyundoek ^a   Park, Hokyung ^a   Lee, Dongsoo ^a   Choi, Sangmoo ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

ALD; Gate; HfO2; MOS; Sc

Indexed keywords

ANNEALING; ATOMIC BEAMS; DEPOSITION; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALLIZING; SCANDIUM;

ALD; GATE; HFO2; MOS;

MOS DEVICES;

EID: 32044446050     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1275     Document Type: Article

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