Formation of nickel suicide layer on strained-Si0.83Ge 0.17/Si(001) using a sacrificial Si layer and its morphological instability

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 A, 2005, Pages 4805-4813

  Jang, Chi Hwan ^a   Shin, Dong Ok ^a   Baik II, Sung ^b   Kim, Young Woon ^b   Song, Young Joo ^c   Shim, Kyu Hwan ^d   Lee, Nae Eung ^a  

^a Sungkyunkwan University   (South Korea)

^b Seoul National University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d Chonbuk National University   (South Korea)

Author keywords

Nickel suicide; Rapid thermal annealing; Silicidation; Silicon germanium

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRIC RESISTANCE; MORPHOLOGY; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SILICON; STRAIN MEASUREMENT; TEMPERATURE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NICKEL SUICIDE; SILICIDATION; SILICON-GERMANIUM;

NICKEL;

EID: 31544457066     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.4805     Document Type: Article

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