Thermal stability study of NiSi and NiSi2 thin films

Microelectronic Engineering

Volumn 71, Issue 1, 2004, Pages 104-111

  Zhao, F F ^a   Zheng, J Z ^a   Shen, Z X ^a   Osipowicz, T ^a   Gao, W Z ^b   Chan, L H ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Nickel silicides; Thermal stability; Thin film

Indexed keywords

AGGLOMERATION; ANNEALING; EPITAXIAL GROWTH; GRAIN BOUNDARIES; MOLECULAR STRUCTURE; NICKEL COMPOUNDS; NUCLEATION; PHASE TRANSITIONS; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY;

GRAIN GROOVING; PHASE STRUCTURE; SHEET RESISTANCE;

THIN FILMS;

EID: 0344740914     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.08.010     Document Type: Article

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