SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1114-1119

  Nishiyama, A ^a   Matsuzawa, K ^a   Takagi, S I ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Bandgap engineering; Drain induced barrier lowering (DIBL); MOSFET; Short channel effect (SCE); SiGe

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ENERGY GAP; FERMI LEVEL; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

DRAIN-INDUCED BARRIER LOWERING (DIBL); SHORT-CHANNEL EFFECTS (SCE);

MOSFET DEVICES;

EID: 0035368030     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925236     Document Type: Article

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