Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 1, 2000, Pages 143-148

  Luo, Jian Shing ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENERGY DISPERSIVE SPECTROSCOPY; NICKEL; PHASE TRANSITIONS; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON COMPOUNDS; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

INTERFACIAL REACTIONS; PULSED LASER ANNEALING; VACUUM ANNEALING;

PHASE INTERFACES;

EID: 0033684350     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582131     Document Type: Article

References (2)

1. S. S. lyer, G. L. Patton, J. M. Stork, B. S. Meyerson, and D. L. Harame, IEEE Trans. Electron Devices 36, 2043 (1989).
2. S. C. Jain and W. Haynes, Semicond. Sci. Technol. 6, 547 (1991).