SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 μm MOSFET fabrication

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 260-264

  Shim, JeoungChill ^a   Oh, Hyuckjae ^a   Choi, Hoon ^a   Sakaguchi, Takeshi ^a   Kurino, Hiroyuki ^a   Koyanagi, Mitsumasa ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Elevated source drain structure; FD SOI MOSFET; Nickel germanosilicide; SiGe; Step annealing

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; FABRICATION; NICKEL COMPOUNDS; SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

ELEVATED SOURCE/DRAIN STRUCTURE; FD SOI MOSFET; NICKEL GERMANOSILICIDE; SIGE; STEP ANNEALING;

MOSFET DEVICES;

EID: 1142304526     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.091     Document Type: Conference Paper

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