Structural properties of nickel silicided Si1-xGex(001) layers

Semiconductor Science and Technology

Volumn 19, Issue 2, 2004, Pages 285-290

  Ok, Young Woo ^a   Kim, Sang Hoon ^b   Song, Young Joo ^b   Shim, Kyu Hwan ^b   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL REACTION; NICKEL GERMANOSILICIDE; NICKEL SILICIDE; SILICIDE ISLANDING; THERMAL GROOVING;

AGGLOMERATION; ANNEALING; ENERGY DISPERSIVE SPECTROSCOPY; INTERFACES (MATERIALS); INTERFACIAL ENERGY; MORPHOLOGY; NICKEL COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 1242310583     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/2/028     Document Type: Article

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