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Volumn 127, Issue 2-3, 2006, Pages 169-179

Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0 0 0 1) substrates and the effect of carrier-blocking layers on their emission characteristics

(6) Park, Ji Soo a Reitmeier, Zachary J a Fothergill, Daryl a Zhang, Xiyao a Muth, John F a Davis, Robert F a

a North Carolina State University (United States)

Author keywords

AlGaN; Carrier blocking layers; Light emitting diodes; Ultraviolet

Indexed keywords

ADSORPTION; FABRICATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

ALGAN; CARRIER-BLOCKING LAYERS; ULTRAVIOLET;

LIGHT EMITTING DIODES;

EID: 31344457823 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.10.019 Document Type: Article

Times cited : (5)

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