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Volumn 201, Issue 12, 2004, Pages 2639-2643
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Milliwatt power 350 nm-band quaternary InAlGaN UV-LEDs on GaN substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM ALLOYS;
CATHODES;
CATHODOLUMINESCENCE;
GALLIUM NITRIDE;
SEGREGATION (METALLOGRAPHY);
SEMICONDUCTING INDIUM;
SEMICONDUCTOR QUANTUM WELLS;
ULTRAVIOLET RADIATION;
IMAGE ANALYSIS;
LUMINESCENCE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR LASERS;
ULTRAVIOLET DEVICES;
CANDIDATE MATERIALS;
ELECTRON BLOCKING LAYER;
MILLIWATT POWER;
TRANSITION ENERGY;
BUFFER LAYERS (BL);
CATHODE LUMINESCENCE (CL);
EMISSION WAVELENGTHS;
ROOM TEMPERATURE (RT);
LIGHT EMITTING DIODES;
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EID: 6344278136
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/pssa.200404994 Document Type: Conference Paper |
Times cited : (9)
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References (11)
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