Highly efficient AlGaN-based UV-LEDs and their application as visible light sources

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4641, Issue , 2002, Pages 68-75

  Nishida, Toshio ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (United States)

Author keywords

AlGaN; Light emitting diode; Nitride semiconductor; Ultraviolet

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; GALLIUM NITRIDE; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; TRANSPARENCY; ULTRAVIOLET DEVICES; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY; OPTICAL TRANSITION; RADIATIVE RECOMBINATION; ULTRAVIOLET LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0036030763     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.469204     Document Type: Article

References (11)

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